Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1063/5.0021719 http://hdl.handle.net/11449/205356 |
Resumo: | In general, the properties of oxide materials are directly related to the formation of defects in their structure. In this work, a correlation between the intrinsic defects of SnO2 nanowires with their optoelectronic and transport properties and the influence of illumination was traced. Photoluminescence experiments revealed that SnO2 nanowires are characterized by three emission centers related to oxygen vacancies, V 0 + (red), (V 0 +) iso (yellow/orange), and V 0 + + (green), the latter being active only below 100 K. This metastable defect was associated with the anomalous behavior observed in the temperature-dependent resistivity curves of ohmic single-nanowire devices under the influence of light. Two activation energies for a single nanowire in different temperature regions (T < 100 K and T > 100 K) were identified by photocurrent measurements. The activation energy for T < 100 K (7 meV) is consistent with the small value obtained in the photoluminescence experiments for the green-emitting center (3 meV). For the high-temperature region (T > 100 K), a higher activation energy value (220 meV) was observed. |
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Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of lightIn general, the properties of oxide materials are directly related to the formation of defects in their structure. In this work, a correlation between the intrinsic defects of SnO2 nanowires with their optoelectronic and transport properties and the influence of illumination was traced. Photoluminescence experiments revealed that SnO2 nanowires are characterized by three emission centers related to oxygen vacancies, V 0 + (red), (V 0 +) iso (yellow/orange), and V 0 + + (green), the latter being active only below 100 K. This metastable defect was associated with the anomalous behavior observed in the temperature-dependent resistivity curves of ohmic single-nanowire devices under the influence of light. Two activation energies for a single nanowire in different temperature regions (T < 100 K and T > 100 K) were identified by photocurrent measurements. The activation energy for T < 100 K (7 meV) is consistent with the small value obtained in the photoluminescence experiments for the green-emitting center (3 meV). For the high-temperature region (T > 100 K), a higher activation energy value (220 meV) was observed.LIEC Instituto de Química Universidade Estadual Paulista-UNESPNanOLaB Departamento de Física Universidade Federal de São CarlosGrupo de Nanoestruturas Semicondutoras Departamento de Física Universidade Federal de São CarlosLIEC Instituto de Química Universidade Estadual Paulista-UNESPUniversidade Estadual Paulista (Unesp)Universidade Federal de São Carlos (UFSCar)Costa, I. M. [UNESP]Teodoro, M. D.Zaghete, M. A. [UNESP]Chiquito, A. J.2021-06-25T10:14:01Z2021-06-25T10:14:01Z2020-09-21info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1063/5.0021719Journal of Applied Physics, v. 128, n. 11, 2020.1089-75500021-8979http://hdl.handle.net/11449/20535610.1063/5.00217192-s2.0-85093534034Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Applied Physicsinfo:eu-repo/semantics/openAccess2021-10-23T12:39:37Zoai:repositorio.unesp.br:11449/205356Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T12:39:37Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
title |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
spellingShingle |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light Costa, I. M. [UNESP] |
title_short |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
title_full |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
title_fullStr |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
title_full_unstemmed |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
title_sort |
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light |
author |
Costa, I. M. [UNESP] |
author_facet |
Costa, I. M. [UNESP] Teodoro, M. D. Zaghete, M. A. [UNESP] Chiquito, A. J. |
author_role |
author |
author2 |
Teodoro, M. D. Zaghete, M. A. [UNESP] Chiquito, A. J. |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade Federal de São Carlos (UFSCar) |
dc.contributor.author.fl_str_mv |
Costa, I. M. [UNESP] Teodoro, M. D. Zaghete, M. A. [UNESP] Chiquito, A. J. |
description |
In general, the properties of oxide materials are directly related to the formation of defects in their structure. In this work, a correlation between the intrinsic defects of SnO2 nanowires with their optoelectronic and transport properties and the influence of illumination was traced. Photoluminescence experiments revealed that SnO2 nanowires are characterized by three emission centers related to oxygen vacancies, V 0 + (red), (V 0 +) iso (yellow/orange), and V 0 + + (green), the latter being active only below 100 K. This metastable defect was associated with the anomalous behavior observed in the temperature-dependent resistivity curves of ohmic single-nanowire devices under the influence of light. Two activation energies for a single nanowire in different temperature regions (T < 100 K and T > 100 K) were identified by photocurrent measurements. The activation energy for T < 100 K (7 meV) is consistent with the small value obtained in the photoluminescence experiments for the green-emitting center (3 meV). For the high-temperature region (T > 100 K), a higher activation energy value (220 meV) was observed. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-09-21 2021-06-25T10:14:01Z 2021-06-25T10:14:01Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1063/5.0021719 Journal of Applied Physics, v. 128, n. 11, 2020. 1089-7550 0021-8979 http://hdl.handle.net/11449/205356 10.1063/5.0021719 2-s2.0-85093534034 |
url |
http://dx.doi.org/10.1063/5.0021719 http://hdl.handle.net/11449/205356 |
identifier_str_mv |
Journal of Applied Physics, v. 128, n. 11, 2020. 1089-7550 0021-8979 10.1063/5.0021719 2-s2.0-85093534034 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Applied Physics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1799964801775960064 |