Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | por |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010 |
Resumo: | Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average size |
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Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímicadiamondboron-dopedchemical vapour depositionRaman spectroscopyscanning electron microscopyBoron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average sizeABM, ABC, ABPol1999-04-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010Materials Research v.2 n.2 1999reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14391999000200010info:eu-repo/semantics/openAccessSilva,Leide Lili Gonçalves daCorat,Evaldo JoséBarros,Rita de Cássia Mendes deTrava-Airoldi,Vladimir JesusLeite,Nélia FerreiraIha,Koshunpor2000-01-21T00:00:00Zoai:scielo:S1516-14391999000200010Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2000-01-21T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
title |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
spellingShingle |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica Silva,Leide Lili Gonçalves da diamond boron-doped chemical vapour deposition Raman spectroscopy scanning electron microscopy |
title_short |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
title_full |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
title_fullStr |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
title_full_unstemmed |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
title_sort |
Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica |
author |
Silva,Leide Lili Gonçalves da |
author_facet |
Silva,Leide Lili Gonçalves da Corat,Evaldo José Barros,Rita de Cássia Mendes de Trava-Airoldi,Vladimir Jesus Leite,Nélia Ferreira Iha,Koshun |
author_role |
author |
author2 |
Corat,Evaldo José Barros,Rita de Cássia Mendes de Trava-Airoldi,Vladimir Jesus Leite,Nélia Ferreira Iha,Koshun |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Silva,Leide Lili Gonçalves da Corat,Evaldo José Barros,Rita de Cássia Mendes de Trava-Airoldi,Vladimir Jesus Leite,Nélia Ferreira Iha,Koshun |
dc.subject.por.fl_str_mv |
diamond boron-doped chemical vapour deposition Raman spectroscopy scanning electron microscopy |
topic |
diamond boron-doped chemical vapour deposition Raman spectroscopy scanning electron microscopy |
description |
Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average size |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-04-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010 |
dc.language.iso.fl_str_mv |
por |
language |
por |
dc.relation.none.fl_str_mv |
10.1590/S1516-14391999000200010 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.2 n.2 1999 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212656541073408 |