Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica

Detalhes bibliográficos
Autor(a) principal: Silva,Leide Lili Gonçalves da
Data de Publicação: 1999
Outros Autores: Corat,Evaldo José, Barros,Rita de Cássia Mendes de, Trava-Airoldi,Vladimir Jesus, Leite,Nélia Ferreira, Iha,Koshun
Tipo de documento: Artigo
Idioma: por
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010
Resumo: Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average size
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spelling Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímicadiamondboron-dopedchemical vapour depositionRaman spectroscopyscanning electron microscopyBoron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average sizeABM, ABC, ABPol1999-04-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010Materials Research v.2 n.2 1999reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14391999000200010info:eu-repo/semantics/openAccessSilva,Leide Lili Gonçalves daCorat,Evaldo JoséBarros,Rita de Cássia Mendes deTrava-Airoldi,Vladimir JesusLeite,Nélia FerreiraIha,Koshunpor2000-01-21T00:00:00Zoai:scielo:S1516-14391999000200010Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2000-01-21T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
title Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
spellingShingle Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
Silva,Leide Lili Gonçalves da
diamond
boron-doped
chemical vapour deposition
Raman spectroscopy
scanning electron microscopy
title_short Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
title_full Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
title_fullStr Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
title_full_unstemmed Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
title_sort Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica
author Silva,Leide Lili Gonçalves da
author_facet Silva,Leide Lili Gonçalves da
Corat,Evaldo José
Barros,Rita de Cássia Mendes de
Trava-Airoldi,Vladimir Jesus
Leite,Nélia Ferreira
Iha,Koshun
author_role author
author2 Corat,Evaldo José
Barros,Rita de Cássia Mendes de
Trava-Airoldi,Vladimir Jesus
Leite,Nélia Ferreira
Iha,Koshun
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Silva,Leide Lili Gonçalves da
Corat,Evaldo José
Barros,Rita de Cássia Mendes de
Trava-Airoldi,Vladimir Jesus
Leite,Nélia Ferreira
Iha,Koshun
dc.subject.por.fl_str_mv diamond
boron-doped
chemical vapour deposition
Raman spectroscopy
scanning electron microscopy
topic diamond
boron-doped
chemical vapour deposition
Raman spectroscopy
scanning electron microscopy
description Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average size
publishDate 1999
dc.date.none.fl_str_mv 1999-04-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200010
dc.language.iso.fl_str_mv por
language por
dc.relation.none.fl_str_mv 10.1590/S1516-14391999000200010
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.2 n.2 1999
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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