Evaluation of piezoresistivity properties of sputtered ZnO thin films
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000300008 |
Resumo: | Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of - 1610 ppm/K up to 250 °C. |
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Evaluation of piezoresistivity properties of sputtered ZnO thin filmsZnOthin filmmagnetron sputteringpiezoresistivityZinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of - 1610 ppm/K up to 250 °C.ABM, ABC, ABPol2014-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000300008Materials Research v.17 n.3 2014reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392014005000080info:eu-repo/semantics/openAccessCardoso,Guilherme Wellington AlvesLeal,GabrielaSilva Sobrinho,Argemiro Soares daFraga,Mariana AmorimMassi,Marcoseng2014-06-18T00:00:00Zoai:scielo:S1516-14392014000300008Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2014-06-18T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
title |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
spellingShingle |
Evaluation of piezoresistivity properties of sputtered ZnO thin films Cardoso,Guilherme Wellington Alves ZnO thin film magnetron sputtering piezoresistivity |
title_short |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
title_full |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
title_fullStr |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
title_full_unstemmed |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
title_sort |
Evaluation of piezoresistivity properties of sputtered ZnO thin films |
author |
Cardoso,Guilherme Wellington Alves |
author_facet |
Cardoso,Guilherme Wellington Alves Leal,Gabriela Silva Sobrinho,Argemiro Soares da Fraga,Mariana Amorim Massi,Marcos |
author_role |
author |
author2 |
Leal,Gabriela Silva Sobrinho,Argemiro Soares da Fraga,Mariana Amorim Massi,Marcos |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Cardoso,Guilherme Wellington Alves Leal,Gabriela Silva Sobrinho,Argemiro Soares da Fraga,Mariana Amorim Massi,Marcos |
dc.subject.por.fl_str_mv |
ZnO thin film magnetron sputtering piezoresistivity |
topic |
ZnO thin film magnetron sputtering piezoresistivity |
description |
Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of - 1610 ppm/K up to 250 °C. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000300008 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000300008 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14392014005000080 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.17 n.3 2014 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212665007276032 |