Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

Detalhes bibliográficos
Autor(a) principal: Silva,Lilian Mieko da
Data de Publicação: 2015
Outros Autores: Santos,Marta dos, Baldan,Maurício Ribeiro, Beloto,Antonio Fernando, Ferreira,Neidenêi Gomes
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407
Resumo: Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.
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spelling Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizationsboron doped ultrananocrystalline diamond filmsporous siliconelectrochemical applicationcapacitanceBoron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.ABM, ABC, ABPol2015-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407Materials Research v.18 n.6 2015reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1516-1439.002715info:eu-repo/semantics/openAccessSilva,Lilian Mieko daSantos,Marta dosBaldan,Maurício RibeiroBeloto,Antonio FernandoFerreira,Neidenêi Gomeseng2015-12-11T00:00:00Zoai:scielo:S1516-14392015000601407Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2015-12-11T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
title Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
spellingShingle Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
Silva,Lilian Mieko da
boron doped ultrananocrystalline diamond films
porous silicon
electrochemical application
capacitance
title_short Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
title_full Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
title_fullStr Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
title_full_unstemmed Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
title_sort Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
author Silva,Lilian Mieko da
author_facet Silva,Lilian Mieko da
Santos,Marta dos
Baldan,Maurício Ribeiro
Beloto,Antonio Fernando
Ferreira,Neidenêi Gomes
author_role author
author2 Santos,Marta dos
Baldan,Maurício Ribeiro
Beloto,Antonio Fernando
Ferreira,Neidenêi Gomes
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Silva,Lilian Mieko da
Santos,Marta dos
Baldan,Maurício Ribeiro
Beloto,Antonio Fernando
Ferreira,Neidenêi Gomes
dc.subject.por.fl_str_mv boron doped ultrananocrystalline diamond films
porous silicon
electrochemical application
capacitance
topic boron doped ultrananocrystalline diamond films
porous silicon
electrochemical application
capacitance
description Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.
publishDate 2015
dc.date.none.fl_str_mv 2015-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1516-1439.002715
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.18 n.6 2015
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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