Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407 |
Resumo: | Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors. |
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Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizationsboron doped ultrananocrystalline diamond filmsporous siliconelectrochemical applicationcapacitanceBoron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.ABM, ABC, ABPol2015-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407Materials Research v.18 n.6 2015reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1516-1439.002715info:eu-repo/semantics/openAccessSilva,Lilian Mieko daSantos,Marta dosBaldan,Maurício RibeiroBeloto,Antonio FernandoFerreira,Neidenêi Gomeseng2015-12-11T00:00:00Zoai:scielo:S1516-14392015000601407Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2015-12-11T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
title |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
spellingShingle |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations Silva,Lilian Mieko da boron doped ultrananocrystalline diamond films porous silicon electrochemical application capacitance |
title_short |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
title_full |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
title_fullStr |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
title_full_unstemmed |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
title_sort |
Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations |
author |
Silva,Lilian Mieko da |
author_facet |
Silva,Lilian Mieko da Santos,Marta dos Baldan,Maurício Ribeiro Beloto,Antonio Fernando Ferreira,Neidenêi Gomes |
author_role |
author |
author2 |
Santos,Marta dos Baldan,Maurício Ribeiro Beloto,Antonio Fernando Ferreira,Neidenêi Gomes |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Silva,Lilian Mieko da Santos,Marta dos Baldan,Maurício Ribeiro Beloto,Antonio Fernando Ferreira,Neidenêi Gomes |
dc.subject.por.fl_str_mv |
boron doped ultrananocrystalline diamond films porous silicon electrochemical application capacitance |
topic |
boron doped ultrananocrystalline diamond films porous silicon electrochemical application capacitance |
description |
Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000601407 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/1516-1439.002715 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.18 n.6 2015 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212666312753152 |