Comparative Sensibility Study of WO3 ph Sensor Using EGFET and Ciclic Voltammetry

• Autor(a) principal: Campos,Renata de Castro
• Data de Publicação: 2015
• Outros Autores: Cestarolli,Dane Tadeu, Mulato,Marcelo, Guerra,Elidia Maria
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Materials research (São Carlos. Online)
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000100015
• topic: tungsten oxide; pH sensor; voltammetry; EGFET

In this present study, the investigation about pH sensorial properties of WO3, via sol-gel, was evaluated by Voltammetry and Extended Gate Field Effect Transistor techniques. The X-ray diffractogram indicates the presence of a lamellar structure, d = 0.69 nm, resulting in WO3.2H2O. From Scanning Electron Microscopy of WO3.2H2O was observed a process corresponding to the delamination which consists of irregular stacking with rounded platelets. The WO3.2H2O was investigated as a pH sensor in the pH range 2–12, by the EGFET and Voltametry techniques presenting a sensitivity of 52 mV/pH and 60 mV/pH, respectively. These results can indicate that both Voltammetry and EGFET techniques present values close to the theoretical limit (59.2 mV/pH) as well as the material is a promising candidate for applications as a pH sensor and as disposable biosensor in the future.