Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment

Detalhes bibliográficos
Autor(a) principal: GALEMBECK, EGON H.S.
Data de Publicação: 2017
Outros Autores: RENAUX, CHRISTIAN, FLANDRE, Denis, FINCO, SAULO, GIMENEZ, SALVADOR P.
Tipo de documento: Artigo
Título da fonte: Biblioteca Digital de Teses e Dissertações da FEI
Texto Completo: https://repositorio.fei.edu.br/handle/FEI/1313
Resumo: 17
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spelling GALEMBECK, EGON H.S.RENAUX, CHRISTIANFLANDRE, DenisFINCO, SAULOGIMENEZ, SALVADOR P.2019-08-19T23:45:29Z2019-08-19T23:45:29Z2017GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.1530-4388https://repositorio.fei.edu.br/handle/FEI/131310.1109/tdmr.2017.2652729IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYBoosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environmentinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article17111info:eu-repo/semantics/openAccessreponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEIFEI/13132019-08-19 20:45:29.558Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI
dc.title.pt_BR.fl_str_mv Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
title Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
spellingShingle Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
GALEMBECK, EGON H.S.
title_short Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
title_full Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
title_fullStr Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
title_full_unstemmed Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
title_sort Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
author GALEMBECK, EGON H.S.
author_facet GALEMBECK, EGON H.S.
RENAUX, CHRISTIAN
FLANDRE, Denis
FINCO, SAULO
GIMENEZ, SALVADOR P.
author_role author
author2 RENAUX, CHRISTIAN
FLANDRE, Denis
FINCO, SAULO
GIMENEZ, SALVADOR P.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv GALEMBECK, EGON H.S.
RENAUX, CHRISTIAN
FLANDRE, Denis
FINCO, SAULO
GIMENEZ, SALVADOR P.
description 17
publishDate 2017
dc.date.issued.fl_str_mv 2017
dc.date.accessioned.fl_str_mv 2019-08-19T23:45:29Z
dc.date.available.fl_str_mv 2019-08-19T23:45:29Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.
dc.identifier.uri.fl_str_mv https://repositorio.fei.edu.br/handle/FEI/1313
dc.identifier.issn.none.fl_str_mv 1530-4388
dc.identifier.doi.none.fl_str_mv 10.1109/tdmr.2017.2652729
identifier_str_mv GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.
1530-4388
10.1109/tdmr.2017.2652729
url https://repositorio.fei.edu.br/handle/FEI/1313
dc.relation.ispartof.none.fl_str_mv IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Biblioteca Digital de Teses e Dissertações da FEI
instname:Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
instname_str Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron_str FEI
institution FEI
reponame_str Biblioteca Digital de Teses e Dissertações da FEI
collection Biblioteca Digital de Teses e Dissertações da FEI
repository.name.fl_str_mv
repository.mail.fl_str_mv
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