Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

• Autor(a) principal: Sabaghi, Masoud
• Data de Publicação: 2020
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Holos
• Texto Completo: http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8378
• topic: III-V material; source heterojunction; channel heterojunction; Tunneling field-effect transistor (TFET).

In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V material. The III-V TFETs based on either source heterojunction and channel heterojunctions have been intensively researched due to their excellent subthreshold-swing characteristics. However, compared with conventional III-V TFETs, the III-V TFETs with source and channel heterojunctions have both shorter tunneling distance and two transmission resonances that significantly improve the on-current. The transfer characteristics affected by gate length were also evaluated. The results show that on-current, off-current, and on-current/off-current ratio and subthreshold-swing of III-V TFETs with source and channel heterojunctions are about 10-3 A/?m, 10-13 A/?m, 10-10 and 30 mV/decade, respectively.