Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate

Detalhes bibliográficos
Autor(a) principal: Brant, Juliana Caldeira
Data de Publicação: 2010
Outros Autores: Eras, Jorge Augusto Leon, Barbosa, Tiago Campolina, Araújo, Eduardo Nery Duarte de, Archanjo, Bráulio Soares, Plentz Filho, Flávio Orlando., Alves, Edenise Segala
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional do INMETRO
Texto Completo: http://hdl.handle.net/10926/1410
Resumo: We have fabricated graphene devices on lightly doped Si substrates and show that pronounced changes in resistance versus gate voltage, R Vg , characteristics of these devices at 77 K are induced by the variation in the charge distribution in substrate with both gate voltage and illumination. The R Vg of the graphene devices in the dark shows remarkable changes as the carriers in the underlying substrate go through accumulation, depletion, and inversion regimes. We demonstrate the possibility of using a graphene device as an optical-latch.
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spelling info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleHysteresis in the resistance of a graphene device induced by charge modulation in the substrate20102012-02-01T11:50:45Z2012-02-01T11:50:45ZWe have fabricated graphene devices on lightly doped Si substrates and show that pronounced changes in resistance versus gate voltage, R Vg , characteristics of these devices at 77 K are induced by the variation in the charge distribution in substrate with both gate voltage and illumination. The R Vg of the graphene devices in the dark shows remarkable changes as the carriers in the underlying substrate go through accumulation, depletion, and inversion regimes. We demonstrate the possibility of using a graphene device as an optical-latch.3 p. : il.Submitted by Josivania Barbosa (josi.inmetro@yahoo.com.br) on 2012-01-17T12:54:25Z No. of bitstreams: 1 Archanjo_2010.pdf: 1058850 bytes, checksum: 989978e6ec6533fa6385339a3f8b3e6e (MD5)Approved for entry into archive by Catarina Soares(cfsoares@inmetro.gov.br) on 2012-02-01T11:50:45Z (GMT) No. of bitstreams: 1 Archanjo_2010.pdf: 1058850 bytes, checksum: 989978e6ec6533fa6385339a3f8b3e6e (MD5)Made available in DSpace on 2012-02-01T11:50:45Z (GMT). No. of bitstreams: 1 Archanjo_2010.pdf: 1058850 bytes, checksum: 989978e6ec6533fa6385339a3f8b3e6e (MD5) Previous issue date: 2010enghttp://hdl.handle.net/10926/1410DMD_hdl_10926/1410BRANT, J. C. et al. Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate. Applied Physics Letters, v. 97, p. 042113-042113-3, 2010.Brant, Juliana CaldeiraEras, Jorge Augusto LeonBarbosa, Tiago CampolinaAraújo, Eduardo Nery Duarte deArchanjo, Bráulio SoaresPlentz Filho, Flávio Orlando.Alves, Edenise Segalainfo:eu-repo/semantics/openAccessreponame:Repositório Institucional do INMETROinstname:Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)instacron:INMETROBrant_2010.pdf.txthttp://xrepo01s.inmetro.gov.br/bitstream/10926/1410/6/Brant_2010.pdf.txttext/plain19264http://xrepo01s.inmetro.gov.br/bitstream/10926/1410/6/Brant_2010.pdf.txt355c8dab9616a7bd5392e4fb256580a5MD510926_1410_6Brant_2010.pdfhttp://xrepo01s.inmetro.gov.br/bitstream/10926/1410/1/Brant_2010.pdfapplication/pdf1058850http://xrepo01s.inmetro.gov.br/bitstream/10926/1410/1/Brant_2010.pdf989978e6ec6533fa6385339a3f8b3e6eMD510926_1410_12024-06-10T15:24:42Zoai:xrepo01s.inmetro.gov.br:10926/1410Repositório de Publicaçõeshttp://repositorios.inmetro.gov.br/oai/requestopendoar:2012-11-21T12:42:32Repositório Institucional do INMETRO - Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)false
dc.title.none.fl_str_mv Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
title Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
spellingShingle Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
Brant, Juliana Caldeira
title_short Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
title_full Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
title_fullStr Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
title_full_unstemmed Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
title_sort Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
author Brant, Juliana Caldeira
author_facet Brant, Juliana Caldeira
Eras, Jorge Augusto Leon
Barbosa, Tiago Campolina
Araújo, Eduardo Nery Duarte de
Archanjo, Bráulio Soares
Plentz Filho, Flávio Orlando.
Alves, Edenise Segala
author_role author
author2 Eras, Jorge Augusto Leon
Barbosa, Tiago Campolina
Araújo, Eduardo Nery Duarte de
Archanjo, Bráulio Soares
Plentz Filho, Flávio Orlando.
Alves, Edenise Segala
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Brant, Juliana Caldeira
Eras, Jorge Augusto Leon
Barbosa, Tiago Campolina
Araújo, Eduardo Nery Duarte de
Archanjo, Bráulio Soares
Plentz Filho, Flávio Orlando.
Alves, Edenise Segala
description We have fabricated graphene devices on lightly doped Si substrates and show that pronounced changes in resistance versus gate voltage, R Vg , characteristics of these devices at 77 K are induced by the variation in the charge distribution in substrate with both gate voltage and illumination. The R Vg of the graphene devices in the dark shows remarkable changes as the carriers in the underlying substrate go through accumulation, depletion, and inversion regimes. We demonstrate the possibility of using a graphene device as an optical-latch.
publishDate 2010
dc.date.issued.fl_str_mv 2010
dc.date.available.fl_str_mv 2012-02-01T11:50:45Z
dc.date.accessioned.fl_str_mv 2012-02-01T11:50:45Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10926/1410
DMD_hdl_10926/1410
dc.identifier.citation.fl_str_mv BRANT, J. C. et al. Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate. Applied Physics Letters, v. 97, p. 042113-042113-3, 2010.
url http://hdl.handle.net/10926/1410
identifier_str_mv DMD_hdl_10926/1410
BRANT, J. C. et al. Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate. Applied Physics Letters, v. 97, p. 042113-042113-3, 2010.
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.bitstream.fl_str_mv text/plain
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instname:Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
instacron:INMETRO
instname_str Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
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institution INMETRO
reponame_str Repositório Institucional do INMETRO
collection Repositório Institucional do INMETRO
repository.name.fl_str_mv Repositório Institucional do INMETRO - Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
repository.mail.fl_str_mv
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