Segregação do índio em cristais Ga1-xInxSb obtidos pelo método bridgman vertical

• Autor(a) principal: Fernandes, Kendra D`abreu Neto
• Data de Publicação: 2012
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: Biblioteca Digital de Teses e Dissertações da PUC_RS
• Texto Completo: http://tede2.pucrs.br/tede2/handle/tede/3214
• topic: ENGENHARIA DE MATERIAIS; SEMICONDUTORES; CRESCIMENTO DOS CRISTAIS; CNPQ::ENGENHARIAS

This paper describes the growth and characterization of III-V compound semiconductors, Ga1-xInxSb lightly doped with aluminum (Al) and cadmium (Cd). The Ga1-xInxSb compound is an interesting material for the development of optical modulators, lasers operating in the mid-infrared range, multi-junction solar cell and thermophotovoltaic cell use. The methodology presents the description of the crystal growth process through Vertical Bridgman Method. The distribution of indium and dopants, analyzed by Energy Dispersive Spectroscopy, was correlated to resistivity, carrier number and mobility throughout the crystals. The change of n-type conductivity to p-type in blades of the same crystals classifies the inhomogeneous distribution of indium dopant and suggests the presence of native defects. The inhomogeneous distribution of indium in the crystals and the segregation of indium antimonide at the end of the crystal is probably linked to destabilization of the solidliquid interface during the process of crystal growth