Semiconductive properties of anodic niobium oxides
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012 |
Resumo: | The semiconductive properties of anodic niobium oxides formed at constant potential and constant current density to different final voltages have been examined by Mott-Schottky analysis. Thin anodic oxides were formed on sputtered niobium specimens at constant potential in the range of 2.5 to 10 V Ag/AgCl in a borate buffer solution. Thicker oxides were formed, also on sputtered niobium specimens, at a constant current density of 5 mA cm-2 in 0.1 M ammonium pentaborate solution to final voltages of 10, 50 and 100 V. Capacitance measurements were performed in a borate buffer solution of pH 8.8, at a frequency range of 200 to 2000 Hz, at a sweep rate of 5 mV s-1 from +2.5 to -1 V Ag/AgCl. The results obtained show n-type semiconductor behaviour with a carrier density in the range of 8 ´ 10(18) - 6 ´ 10(19) cm-3 on films formed to 10 V. Thicker films showed lower carrier densities in the range of 1 ´ 10(18) - 2 ´ 10(18) cm-3 with a calculated charge depletion layer of 33-36 nm. |
id |
RCAP_1115997b45e1e01dfe0d9680dc558413 |
---|---|
oai_identifier_str |
oai:scielo:S0872-19042006000200012 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Semiconductive properties of anodic niobium oxidesniobium oxidesanodic oxidesMott-Schottky behaviourThe semiconductive properties of anodic niobium oxides formed at constant potential and constant current density to different final voltages have been examined by Mott-Schottky analysis. Thin anodic oxides were formed on sputtered niobium specimens at constant potential in the range of 2.5 to 10 V Ag/AgCl in a borate buffer solution. Thicker oxides were formed, also on sputtered niobium specimens, at a constant current density of 5 mA cm-2 in 0.1 M ammonium pentaborate solution to final voltages of 10, 50 and 100 V. Capacitance measurements were performed in a borate buffer solution of pH 8.8, at a frequency range of 200 to 2000 Hz, at a sweep rate of 5 mV s-1 from +2.5 to -1 V Ag/AgCl. The results obtained show n-type semiconductor behaviour with a carrier density in the range of 8 ´ 10(18) - 6 ´ 10(19) cm-3 on films formed to 10 V. Thicker films showed lower carrier densities in the range of 1 ´ 10(18) - 2 ´ 10(18) cm-3 with a calculated charge depletion layer of 33-36 nm.Sociedade Portuguesa de Electroquímica2006-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articletext/htmlhttp://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012Portugaliae Electrochimica Acta v.24 n.2 2006reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAPenghttp://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012Sá,A.I. deRangel,C.M.Skeldon,P.Thompson,G.E.info:eu-repo/semantics/openAccess2024-02-06T17:06:49Zoai:scielo:S0872-19042006000200012Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:20:00.963771Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Semiconductive properties of anodic niobium oxides |
title |
Semiconductive properties of anodic niobium oxides |
spellingShingle |
Semiconductive properties of anodic niobium oxides Sá,A.I. de niobium oxides anodic oxides Mott-Schottky behaviour |
title_short |
Semiconductive properties of anodic niobium oxides |
title_full |
Semiconductive properties of anodic niobium oxides |
title_fullStr |
Semiconductive properties of anodic niobium oxides |
title_full_unstemmed |
Semiconductive properties of anodic niobium oxides |
title_sort |
Semiconductive properties of anodic niobium oxides |
author |
Sá,A.I. de |
author_facet |
Sá,A.I. de Rangel,C.M. Skeldon,P. Thompson,G.E. |
author_role |
author |
author2 |
Rangel,C.M. Skeldon,P. Thompson,G.E. |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Sá,A.I. de Rangel,C.M. Skeldon,P. Thompson,G.E. |
dc.subject.por.fl_str_mv |
niobium oxides anodic oxides Mott-Schottky behaviour |
topic |
niobium oxides anodic oxides Mott-Schottky behaviour |
description |
The semiconductive properties of anodic niobium oxides formed at constant potential and constant current density to different final voltages have been examined by Mott-Schottky analysis. Thin anodic oxides were formed on sputtered niobium specimens at constant potential in the range of 2.5 to 10 V Ag/AgCl in a borate buffer solution. Thicker oxides were formed, also on sputtered niobium specimens, at a constant current density of 5 mA cm-2 in 0.1 M ammonium pentaborate solution to final voltages of 10, 50 and 100 V. Capacitance measurements were performed in a borate buffer solution of pH 8.8, at a frequency range of 200 to 2000 Hz, at a sweep rate of 5 mV s-1 from +2.5 to -1 V Ag/AgCl. The results obtained show n-type semiconductor behaviour with a carrier density in the range of 8 ´ 10(18) - 6 ´ 10(19) cm-3 on films formed to 10 V. Thicker films showed lower carrier densities in the range of 1 ´ 10(18) - 2 ´ 10(18) cm-3 with a calculated charge depletion layer of 33-36 nm. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-01-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012 |
url |
http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Portuguesa de Electroquímica |
publisher.none.fl_str_mv |
Sociedade Portuguesa de Electroquímica |
dc.source.none.fl_str_mv |
Portugaliae Electrochimica Acta v.24 n.2 2006 reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799137289431941120 |