Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films

Detalhes bibliográficos
Autor(a) principal: González, J.C.
Data de Publicação: 2014
Outros Autores: Fernandes, P.A., Ribeiro, G.M., Abelenda, A., Viana, E.R., Salomé, P.M.P., Cunha, A.F. da
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.22/13058
Resumo: The effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detected
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spelling Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin filmsCu2ZnSnS4 (CZTS)Thin film solar cellsAbsorber layerHopping transportThe effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detectedRepositório Científico do Instituto Politécnico do PortoGonzález, J.C.Fernandes, P.A.Ribeiro, G.M.Abelenda, A.Viana, E.R.Salomé, P.M.P.Cunha, A.F. da2019-03-19T16:17:24Z20142014-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/13058eng0927-024810.1016/j.solmat.2014.01.005info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T12:54:59Zoai:recipp.ipp.pt:10400.22/13058Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:33:13.107234Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
title Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
spellingShingle Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
González, J.C.
Cu2ZnSnS4 (CZTS)
Thin film solar cells
Absorber layer
Hopping transport
title_short Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
title_full Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
title_fullStr Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
title_full_unstemmed Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
title_sort Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
author González, J.C.
author_facet González, J.C.
Fernandes, P.A.
Ribeiro, G.M.
Abelenda, A.
Viana, E.R.
Salomé, P.M.P.
Cunha, A.F. da
author_role author
author2 Fernandes, P.A.
Ribeiro, G.M.
Abelenda, A.
Viana, E.R.
Salomé, P.M.P.
Cunha, A.F. da
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Repositório Científico do Instituto Politécnico do Porto
dc.contributor.author.fl_str_mv González, J.C.
Fernandes, P.A.
Ribeiro, G.M.
Abelenda, A.
Viana, E.R.
Salomé, P.M.P.
Cunha, A.F. da
dc.subject.por.fl_str_mv Cu2ZnSnS4 (CZTS)
Thin film solar cells
Absorber layer
Hopping transport
topic Cu2ZnSnS4 (CZTS)
Thin film solar cells
Absorber layer
Hopping transport
description The effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detected
publishDate 2014
dc.date.none.fl_str_mv 2014
2014-01-01T00:00:00Z
2019-03-19T16:17:24Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.22/13058
url http://hdl.handle.net/10400.22/13058
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0927-0248
10.1016/j.solmat.2014.01.005
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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