Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.22/13058 |
Resumo: | The effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detected |
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Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin filmsCu2ZnSnS4 (CZTS)Thin film solar cellsAbsorber layerHopping transportThe effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detectedRepositório Científico do Instituto Politécnico do PortoGonzález, J.C.Fernandes, P.A.Ribeiro, G.M.Abelenda, A.Viana, E.R.Salomé, P.M.P.Cunha, A.F. da2019-03-19T16:17:24Z20142014-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/13058eng0927-024810.1016/j.solmat.2014.01.005info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T12:54:59Zoai:recipp.ipp.pt:10400.22/13058Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:33:13.107234Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
title |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
spellingShingle |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films González, J.C. Cu2ZnSnS4 (CZTS) Thin film solar cells Absorber layer Hopping transport |
title_short |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
title_full |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
title_fullStr |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
title_full_unstemmed |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
title_sort |
Influence of the sulphurization time on the morphological, chemical, structural and electrical properties of Cu2ZnSnS4 polycrystalline thin films |
author |
González, J.C. |
author_facet |
González, J.C. Fernandes, P.A. Ribeiro, G.M. Abelenda, A. Viana, E.R. Salomé, P.M.P. Cunha, A.F. da |
author_role |
author |
author2 |
Fernandes, P.A. Ribeiro, G.M. Abelenda, A. Viana, E.R. Salomé, P.M.P. Cunha, A.F. da |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Repositório Científico do Instituto Politécnico do Porto |
dc.contributor.author.fl_str_mv |
González, J.C. Fernandes, P.A. Ribeiro, G.M. Abelenda, A. Viana, E.R. Salomé, P.M.P. Cunha, A.F. da |
dc.subject.por.fl_str_mv |
Cu2ZnSnS4 (CZTS) Thin film solar cells Absorber layer Hopping transport |
topic |
Cu2ZnSnS4 (CZTS) Thin film solar cells Absorber layer Hopping transport |
description |
The effects of the sulphurization annealing time on the morphological, chemical, structural and electrical properties of CZTS thin films were investigated by scanning electron microscopy, X-ray energy dispersive spectroscopy, Hall effect and electrical conductivity measurements in samples annealed during different time intervals. The increase of the annealing time was found to improve the chemical composition of the samples and to, slightly, increase the crystallite size. Small amounts of Na were measured in the samples. However, the concentration of Na does not increase significantly with the annealing time and should not modify the characteristics of the CZTS thin films. It was also found that at high temperature the electrical conductivity is dominated by thermal emission of carriers over the inter-grain potential barriers. As the temperature decreases different hopping conduction mechanisms start to dominate. At first with nearest-neighbour hopping and successively changing to variable range hopping conduction with a crossover from Mott and Efros–Shklovskii behavior. The electrical conductivity, the concentration of free holes, acceptors and donors, traps0 density at the grain boundaries and the grain potential barriers height were found to increase with the annealing time. However, a significant drop in the compensation ratio from 0.8 to 0.5 was also detected |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014 2014-01-01T00:00:00Z 2019-03-19T16:17:24Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.22/13058 |
url |
http://hdl.handle.net/10400.22/13058 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0927-0248 10.1016/j.solmat.2014.01.005 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1817551789524779008 |