Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation

Detalhes bibliográficos
Autor(a) principal: Ribeiro, Guilherme
Data de Publicação: 2023
Outros Autores: Ferreira, G., Menda, U.D., Alexandre, Miguel, Brites, Maria João, Barreiros, M. Alexandra, Jana, S., Águas, Hugo, Martins, Rodrigo, Fernandes, P.A., Salomé, P.M.P., Mendes, M.J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.9/4159
Resumo: ABSTRACT: By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
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spelling Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots IncorporationPhotovoltaic materialsPerovskite solar cellsABSTRACT: By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.MDPIRepositório do LNEGRibeiro, GuilhermeFerreira, G.Menda, U.D.Alexandre, MiguelBrites, Maria JoãoBarreiros, M. AlexandraJana, S.Águas, HugoMartins, RodrigoFernandes, P.A.Salomé, P.M.P.Mendes, M.J.2023-10-06T14:45:45Z2023-092023-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.9/4159engRibeiro, G... et.al - Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation. In: Nanomaterials, 2023, vol. 13 (17), article nº 244710.3390/nano131724472079-4991info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-10-08T06:32:25Zoai:repositorio.lneg.pt:10400.9/4159Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:33:58.705287Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
title Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
spellingShingle Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
Ribeiro, Guilherme
Photovoltaic materials
Perovskite solar cells
title_short Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
title_full Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
title_fullStr Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
title_full_unstemmed Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
title_sort Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
author Ribeiro, Guilherme
author_facet Ribeiro, Guilherme
Ferreira, G.
Menda, U.D.
Alexandre, Miguel
Brites, Maria João
Barreiros, M. Alexandra
Jana, S.
Águas, Hugo
Martins, Rodrigo
Fernandes, P.A.
Salomé, P.M.P.
Mendes, M.J.
author_role author
author2 Ferreira, G.
Menda, U.D.
Alexandre, Miguel
Brites, Maria João
Barreiros, M. Alexandra
Jana, S.
Águas, Hugo
Martins, Rodrigo
Fernandes, P.A.
Salomé, P.M.P.
Mendes, M.J.
author2_role author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Repositório do LNEG
dc.contributor.author.fl_str_mv Ribeiro, Guilherme
Ferreira, G.
Menda, U.D.
Alexandre, Miguel
Brites, Maria João
Barreiros, M. Alexandra
Jana, S.
Águas, Hugo
Martins, Rodrigo
Fernandes, P.A.
Salomé, P.M.P.
Mendes, M.J.
dc.subject.por.fl_str_mv Photovoltaic materials
Perovskite solar cells
topic Photovoltaic materials
Perovskite solar cells
description ABSTRACT: By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
publishDate 2023
dc.date.none.fl_str_mv 2023-10-06T14:45:45Z
2023-09
2023-09-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.9/4159
url http://hdl.handle.net/10400.9/4159
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Ribeiro, G... et.al - Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation. In: Nanomaterials, 2023, vol. 13 (17), article nº 2447
10.3390/nano13172447
2079-4991
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv MDPI
publisher.none.fl_str_mv MDPI
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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