Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/81258 |
Resumo: | Hexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies. |
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Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD2D materialHexagonal boron nitrideAtmospheric-pressure chemical vapordepositionSingle-photon emittersAtmospheric-pressure chemical vapor depositionCiências Naturais::Ciências FísicasScience & TechnologyHexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies.We acknowledge the financial support of i) the project “GEMIS – Graphene-enhanced Electro Magnetic Interference Shielding,” with the reference POCI-01-0247-FEDER-045939, co-funded by COMPETE 2020 – Operational Programme for Competitiveness and Internationalization and FCT –Science and Technology Foundation, under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDF); ii) the project "Graphene and novel thin films for super-resolution microscopy and bio-sensing" (PTDC/NAN-OPT/29417/2017) financed by ERDF, through the Competitiveness and Internationalization Operational Program (POCI) by Portugal 2020 and by the Portuguese Foundation for Science and Technology (FCT) with references POCI-01-0145-FEDER-029417 and PTDC/NAN-OPT/29417/2017; iii) the FCT in the framework of the Strategic Funding UIDB/04650/2020. One of the authors (T.Q.) acknowledges the FCT financial support under the Quantum Portugal Initiative Ph.D. scholarship SFRH/BD/150646/2020. We acknowledge the support by the INL AEMIS, Micro- and Nanofabrication, and Nanophotonics and Bioimaging research core facilities.ElsevierUniversidade do MinhoFernandes, JoãoQueirós, TiagoRodrigues, JoãoNemala, Siva SankarLaGrow, Alec P.Placidi, ErnestoAlpuim, P.Nieder, Jana B.Capasso, Andrea2022-052022-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/81258engFernandes, J., Queirós, T., Rodrigues, J., Nemala, S. S., LaGrow, A. P., Placidi, E., … Capasso, A. (2022, May). Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD. FlatChem. Elsevier BV. http://doi.org/10.1016/j.flatc.2022.1003662452-262710.1016/j.flatc.2022.100366https://www.sciencedirect.com/science/article/pii/S2452262722000332info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T05:52:02Zoai:repositorium.sdum.uminho.pt:1822/81258Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T05:52:02Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
title |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
spellingShingle |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD Fernandes, João 2D material Hexagonal boron nitride Atmospheric-pressure chemical vapor deposition Single-photon emitters Atmospheric-pressure chemical vapor deposition Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
title_full |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
title_fullStr |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
title_full_unstemmed |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
title_sort |
Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD |
author |
Fernandes, João |
author_facet |
Fernandes, João Queirós, Tiago Rodrigues, João Nemala, Siva Sankar LaGrow, Alec P. Placidi, Ernesto Alpuim, P. Nieder, Jana B. Capasso, Andrea |
author_role |
author |
author2 |
Queirós, Tiago Rodrigues, João Nemala, Siva Sankar LaGrow, Alec P. Placidi, Ernesto Alpuim, P. Nieder, Jana B. Capasso, Andrea |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Fernandes, João Queirós, Tiago Rodrigues, João Nemala, Siva Sankar LaGrow, Alec P. Placidi, Ernesto Alpuim, P. Nieder, Jana B. Capasso, Andrea |
dc.subject.por.fl_str_mv |
2D material Hexagonal boron nitride Atmospheric-pressure chemical vapor deposition Single-photon emitters Atmospheric-pressure chemical vapor deposition Ciências Naturais::Ciências Físicas Science & Technology |
topic |
2D material Hexagonal boron nitride Atmospheric-pressure chemical vapor deposition Single-photon emitters Atmospheric-pressure chemical vapor deposition Ciências Naturais::Ciências Físicas Science & Technology |
description |
Hexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-05 2022-05-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/81258 |
url |
https://hdl.handle.net/1822/81258 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Fernandes, J., Queirós, T., Rodrigues, J., Nemala, S. S., LaGrow, A. P., Placidi, E., … Capasso, A. (2022, May). Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD. FlatChem. Elsevier BV. http://doi.org/10.1016/j.flatc.2022.100366 2452-2627 10.1016/j.flatc.2022.100366 https://www.sciencedirect.com/science/article/pii/S2452262722000332 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
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