Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD

Detalhes bibliográficos
Autor(a) principal: Fernandes, João
Data de Publicação: 2022
Outros Autores: Queirós, Tiago, Rodrigues, João, Nemala, Siva Sankar, LaGrow, Alec P., Placidi, Ernesto, Alpuim, P., Nieder, Jana B., Capasso, Andrea
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/81258
Resumo: Hexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies.
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spelling Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD2D materialHexagonal boron nitrideAtmospheric-pressure chemical vapordepositionSingle-photon emittersAtmospheric-pressure chemical vapor depositionCiências Naturais::Ciências FísicasScience & TechnologyHexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies.We acknowledge the financial support of i) the project “GEMIS – Graphene-enhanced Electro Magnetic Interference Shielding,” with the reference POCI-01-0247-FEDER-045939, co-funded by COMPETE 2020 – Operational Programme for Competitiveness and Internationalization and FCT –Science and Technology Foundation, under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDF); ii) the project "Graphene and novel thin films for super-resolution microscopy and bio-sensing" (PTDC/NAN-OPT/29417/2017) financed by ERDF, through the Competitiveness and Internationalization Operational Program (POCI) by Portugal 2020 and by the Portuguese Foundation for Science and Technology (FCT) with references POCI-01-0145-FEDER-029417 and PTDC/NAN-OPT/29417/2017; iii) the FCT in the framework of the Strategic Funding UIDB/04650/2020. One of the authors (T.Q.) acknowledges the FCT financial support under the Quantum Portugal Initiative Ph.D. scholarship SFRH/BD/150646/2020. We acknowledge the support by the INL AEMIS, Micro- and Nanofabrication, and Nanophotonics and Bioimaging research core facilities.ElsevierUniversidade do MinhoFernandes, JoãoQueirós, TiagoRodrigues, JoãoNemala, Siva SankarLaGrow, Alec P.Placidi, ErnestoAlpuim, P.Nieder, Jana B.Capasso, Andrea2022-052022-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/81258engFernandes, J., Queirós, T., Rodrigues, J., Nemala, S. S., LaGrow, A. P., Placidi, E., … Capasso, A. (2022, May). Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD. FlatChem. Elsevier BV. http://doi.org/10.1016/j.flatc.2022.1003662452-262710.1016/j.flatc.2022.100366https://www.sciencedirect.com/science/article/pii/S2452262722000332info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T05:52:02Zoai:repositorium.sdum.uminho.pt:1822/81258Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T05:52:02Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
title Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
spellingShingle Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
Fernandes, João
2D material
Hexagonal boron nitride
Atmospheric-pressure chemical vapor
deposition
Single-photon emitters
Atmospheric-pressure chemical vapor deposition
Ciências Naturais::Ciências Físicas
Science & Technology
title_short Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
title_full Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
title_fullStr Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
title_full_unstemmed Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
title_sort Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD
author Fernandes, João
author_facet Fernandes, João
Queirós, Tiago
Rodrigues, João
Nemala, Siva Sankar
LaGrow, Alec P.
Placidi, Ernesto
Alpuim, P.
Nieder, Jana B.
Capasso, Andrea
author_role author
author2 Queirós, Tiago
Rodrigues, João
Nemala, Siva Sankar
LaGrow, Alec P.
Placidi, Ernesto
Alpuim, P.
Nieder, Jana B.
Capasso, Andrea
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Fernandes, João
Queirós, Tiago
Rodrigues, João
Nemala, Siva Sankar
LaGrow, Alec P.
Placidi, Ernesto
Alpuim, P.
Nieder, Jana B.
Capasso, Andrea
dc.subject.por.fl_str_mv 2D material
Hexagonal boron nitride
Atmospheric-pressure chemical vapor
deposition
Single-photon emitters
Atmospheric-pressure chemical vapor deposition
Ciências Naturais::Ciências Físicas
Science & Technology
topic 2D material
Hexagonal boron nitride
Atmospheric-pressure chemical vapor
deposition
Single-photon emitters
Atmospheric-pressure chemical vapor deposition
Ciências Naturais::Ciências Físicas
Science & Technology
description Hexagonal boron nitride (hBN) is a two-dimensional, wide band gap semiconductor material suitable for several technologies. 2D hBN appeared as a viable platform to produce bright and optically stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. In this context, one main challenge concerns the upscaling of 2D hBN with uniform spatial and spectral distribution of SPE sources. In this work we optimized the atmospheric-pressure chemical vapor deposition (APCVD) growth and obtained large-area 2D hBN with uniform fluorescence emission properties. We characterized the hBN films by a combination of electron microscopy, Raman and X-ray photoelectron spectroscopy techniques. The extensive characterization revealed few-layer, polycrystalline hBN films (∼3 nm thickness) with balanced stoichiometry and uniformity over 2″ wafer scale. We studied the fluorescence emission properties of the hBN films by multidimensional hyperspectral fluorescence microscopy. We measured simultaneously the spatial position, intensity, and spectral properties of the emitters, which were exposed to continuous illumination over minutes. Three main emission peaks (at 538, 582, and 617 nm) were observed, with associated replica peaks red-shifted by ∼53 nm. A surface emitter density of ∼0.1 emitters/μm2 was found. A comparative test with pristine hBN nanosheets produced by liquid-phase exfoliation (LPE) was performed, finding that CVD and LPE hBN possess analogous spectral emitter categories in terms of peak position/intensity and density. Overall, the line-shape and wavelength of the emission peaks, as well as the other measured features, are consistent with single-photon emission from hBN. The results indicate that APCVD hBN might proficiently serve as a SPE platform for quantum technologies.
publishDate 2022
dc.date.none.fl_str_mv 2022-05
2022-05-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/81258
url https://hdl.handle.net/1822/81258
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Fernandes, J., Queirós, T., Rodrigues, J., Nemala, S. S., LaGrow, A. P., Placidi, E., … Capasso, A. (2022, May). Room-temperature emitters in wafer-scale few-layer hBN by atmospheric pressure CVD. FlatChem. Elsevier BV. http://doi.org/10.1016/j.flatc.2022.100366
2452-2627
10.1016/j.flatc.2022.100366
https://www.sciencedirect.com/science/article/pii/S2452262722000332
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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