Photoluminescence studies of heat-treated GAP:S samples

Detalhes bibliográficos
Autor(a) principal: Monteiro, T.
Data de Publicação: 1993
Outros Autores: Pereira, E., Dominguez-Adame, F., Piqueras, J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/6203
Resumo: Time resolved photoluminescence (TRPL) of untreated and heat-treated n-type Gap:S samples has been investigated and compared with data from cathodoluminescence in a scanning electron microscope (CL-SEM). Special attention is given to broad emission bands in the region of 1.8 to 1.6 eV. TRPL: shows that dependent on temperature different optical centers are responsible for the luminescence. While the low temperature emission presents a donor-acceptor (D-A) pair behavior above 70 K an excitonic emission dominates with an exponential decay (of the order of seconds at 70 K) in the whole temperature region where it is measured. The temperature behavior of the decay and intensity of these bands leads to the understanding of the processes involved in the luminescence. From the data the distribution of the defects and the levels involved in the emission are discussed. The influence of the annealing in the rearrangement of the defects is analyzed.
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spelling Photoluminescence studies of heat-treated GAP:S samplesHotoluminescenceIII-V semiconductorsVisible spectraTime resolved spectraHeat treatmentCathodoluminescenceImpurity statesDefect statesTime resolved photoluminescence (TRPL) of untreated and heat-treated n-type Gap:S samples has been investigated and compared with data from cathodoluminescence in a scanning electron microscope (CL-SEM). Special attention is given to broad emission bands in the region of 1.8 to 1.6 eV. TRPL: shows that dependent on temperature different optical centers are responsible for the luminescence. While the low temperature emission presents a donor-acceptor (D-A) pair behavior above 70 K an excitonic emission dominates with an exponential decay (of the order of seconds at 70 K) in the whole temperature region where it is measured. The temperature behavior of the decay and intensity of these bands leads to the understanding of the processes involved in the luminescence. From the data the distribution of the defects and the levels involved in the emission are discussed. The influence of the annealing in the rearrangement of the defects is analyzed.ECS2012-02-10T14:37:35Z1993-01-01T00:00:00Z1993info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/6203eng0013-465110.1149/1.2221139Monteiro, T.Pereira, E.Dominguez-Adame, F.Piqueras, J.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:08:07Zoai:ria.ua.pt:10773/6203Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:43:27.007402Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Photoluminescence studies of heat-treated GAP:S samples
title Photoluminescence studies of heat-treated GAP:S samples
spellingShingle Photoluminescence studies of heat-treated GAP:S samples
Monteiro, T.
Hotoluminescence
III-V semiconductors
Visible spectra
Time resolved spectra
Heat treatment
Cathodoluminescence
Impurity states
Defect states
title_short Photoluminescence studies of heat-treated GAP:S samples
title_full Photoluminescence studies of heat-treated GAP:S samples
title_fullStr Photoluminescence studies of heat-treated GAP:S samples
title_full_unstemmed Photoluminescence studies of heat-treated GAP:S samples
title_sort Photoluminescence studies of heat-treated GAP:S samples
author Monteiro, T.
author_facet Monteiro, T.
Pereira, E.
Dominguez-Adame, F.
Piqueras, J.
author_role author
author2 Pereira, E.
Dominguez-Adame, F.
Piqueras, J.
author2_role author
author
author
dc.contributor.author.fl_str_mv Monteiro, T.
Pereira, E.
Dominguez-Adame, F.
Piqueras, J.
dc.subject.por.fl_str_mv Hotoluminescence
III-V semiconductors
Visible spectra
Time resolved spectra
Heat treatment
Cathodoluminescence
Impurity states
Defect states
topic Hotoluminescence
III-V semiconductors
Visible spectra
Time resolved spectra
Heat treatment
Cathodoluminescence
Impurity states
Defect states
description Time resolved photoluminescence (TRPL) of untreated and heat-treated n-type Gap:S samples has been investigated and compared with data from cathodoluminescence in a scanning electron microscope (CL-SEM). Special attention is given to broad emission bands in the region of 1.8 to 1.6 eV. TRPL: shows that dependent on temperature different optical centers are responsible for the luminescence. While the low temperature emission presents a donor-acceptor (D-A) pair behavior above 70 K an excitonic emission dominates with an exponential decay (of the order of seconds at 70 K) in the whole temperature region where it is measured. The temperature behavior of the decay and intensity of these bands leads to the understanding of the processes involved in the luminescence. From the data the distribution of the defects and the levels involved in the emission are discussed. The influence of the annealing in the rearrangement of the defects is analyzed.
publishDate 1993
dc.date.none.fl_str_mv 1993-01-01T00:00:00Z
1993
2012-02-10T14:37:35Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/6203
url http://hdl.handle.net/10773/6203
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0013-4651
10.1149/1.2221139
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv ECS
publisher.none.fl_str_mv ECS
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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