Dynamic wet etching of silicon through isopropanol alcohol evaporation
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/40574 |
Resumo: | In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane. |
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Dynamic wet etching of silicon through isopropanol alcohol evaporationIsopropanol evaporationIsopropanol availabilitySilicon wet etchingMicroloading effectEngenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e InformáticaScience & TechnologyIn this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.This work was supported by FCT (Fundação para a Ciência e Tecnologia) in the scope of the project PTDC/EBB-EBI/120334/2010 and by FEDER funds through the “Eixo I do Programa Operacional Fatores de Competitividade” (POFC) QREN, project reference COMPETE: FCOMP-01-0124-FEDER-020241. First author thanks FCT for scholarship grant SFRH/BD/74975/2010. INESC-MN and acknowledges Pest-OE/CTM/LA0024/2011 project.MDPIUniversidade do MinhoMonteiro, T. S.Kastytis, PamakštysGonçalves, L. M.Minas, GraçaCardoso, Susana20152015-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/40574engMicromachines 2015, 6(10), 1534-1545; doi:10.3390/mi61014372072-666X10.3390/mi6101437http://www.mdpi.com/2072-666X/6/10/1437info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:39:43Zoai:repositorium.sdum.uminho.pt:1822/40574Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:36:22.767461Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
title |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
spellingShingle |
Dynamic wet etching of silicon through isopropanol alcohol evaporation Monteiro, T. S. Isopropanol evaporation Isopropanol availability Silicon wet etching Microloading effect Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
title_short |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
title_full |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
title_fullStr |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
title_full_unstemmed |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
title_sort |
Dynamic wet etching of silicon through isopropanol alcohol evaporation |
author |
Monteiro, T. S. |
author_facet |
Monteiro, T. S. Kastytis, Pamakštys Gonçalves, L. M. Minas, Graça Cardoso, Susana |
author_role |
author |
author2 |
Kastytis, Pamakštys Gonçalves, L. M. Minas, Graça Cardoso, Susana |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Monteiro, T. S. Kastytis, Pamakštys Gonçalves, L. M. Minas, Graça Cardoso, Susana |
dc.subject.por.fl_str_mv |
Isopropanol evaporation Isopropanol availability Silicon wet etching Microloading effect Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
topic |
Isopropanol evaporation Isopropanol availability Silicon wet etching Microloading effect Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
description |
In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015 2015-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/40574 |
url |
http://hdl.handle.net/1822/40574 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Micromachines 2015, 6(10), 1534-1545; doi:10.3390/mi6101437 2072-666X 10.3390/mi6101437 http://www.mdpi.com/2072-666X/6/10/1437 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
MDPI |
publisher.none.fl_str_mv |
MDPI |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799132893053714432 |