Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

Detalhes bibliográficos
Autor(a) principal: Bory, B. F.
Data de Publicação: 2014
Outros Autores: Rocha, Paulo R. F., Janssen, R. A. J., Gomes, Henrique L., de Leeuw, D. M., Meskers, S. C. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/6635
Resumo: Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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spelling Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electronsThin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.American Institute of PhysicsSapientiaBory, B. F.Rocha, Paulo R. F.Janssen, R. A. J.Gomes, Henrique L.de Leeuw, D. M.Meskers, S. C. J.2015-06-26T14:18:46Z20142014-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/6635eng0003-6951AUT: HGO00803;https://dx.doi.org/10.1063/1.4896636info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:17:48Zoai:sapientia.ualg.pt:10400.1/6635Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:59:16.439051Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
spellingShingle Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
Bory, B. F.
title_short Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_full Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_fullStr Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_full_unstemmed Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_sort Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
author Bory, B. F.
author_facet Bory, B. F.
Rocha, Paulo R. F.
Janssen, R. A. J.
Gomes, Henrique L.
de Leeuw, D. M.
Meskers, S. C. J.
author_role author
author2 Rocha, Paulo R. F.
Janssen, R. A. J.
Gomes, Henrique L.
de Leeuw, D. M.
Meskers, S. C. J.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Bory, B. F.
Rocha, Paulo R. F.
Janssen, R. A. J.
Gomes, Henrique L.
de Leeuw, D. M.
Meskers, S. C. J.
description Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
publishDate 2014
dc.date.none.fl_str_mv 2014
2014-01-01T00:00:00Z
2015-06-26T14:18:46Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/6635
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dc.language.iso.fl_str_mv eng
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dc.relation.none.fl_str_mv 0003-6951
AUT: HGO00803;
https://dx.doi.org/10.1063/1.4896636
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dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
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instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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