Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition

Detalhes bibliográficos
Autor(a) principal: Alpuim, P.
Data de Publicação: 2003
Outros Autores: Chu, V., Conde, J. P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/5555
Resumo: The gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: 25 degreesC and 100 degreesC. Films were deposited by radio-frequency plasma-enhanced chemical vapor deposition using phosphine or diborane for n- or p-type doping, respectively. Similar electronic and structural properties are obtained for the doped films deposited on either substrate. Hydrogen dilution of silane is used to improve the electronic and structural properties of the amorphous films and to obtain nanocrystalline films. The most conductive amorphous films have n-type dark conductivity at room temperature similar to10(-3) Omega(-1) cm(-1) and similar to10(-5) Omega(-1) cm(-1) when deposited at 100degreesC and 25degreesC, respectively, or p-type room-temperature dark conductivity similar to10(-7) Omega(-1) cm(-1) at both substrate temperatures. The most conductive nanocrystalline films deposited at 100 degreesC have n- and p-type dark conductivity at room temperature above 10(-2) Omega(-1) cm(-1) while nanocrystalline films deposited at 25 degreesC only have p-type conductivity higher than 10(-2) Omega(-1) cm(-1) at room temperature. Isochronal annealing at temperatures up to 300 degreesC showed that the dopants are fully activated at the deposition temperature in doped nanocrystalline samples and that they are only partially activated in amorphous films deposited at low substrate temperatures.
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spelling Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor depositionThin-film transistorsA-SI-HMicrocrystalline SiliconHydrogenBoronRamanScience & TechnologyThe gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: 25 degreesC and 100 degreesC. Films were deposited by radio-frequency plasma-enhanced chemical vapor deposition using phosphine or diborane for n- or p-type doping, respectively. Similar electronic and structural properties are obtained for the doped films deposited on either substrate. Hydrogen dilution of silane is used to improve the electronic and structural properties of the amorphous films and to obtain nanocrystalline films. The most conductive amorphous films have n-type dark conductivity at room temperature similar to10(-3) Omega(-1) cm(-1) and similar to10(-5) Omega(-1) cm(-1) when deposited at 100degreesC and 25degreesC, respectively, or p-type room-temperature dark conductivity similar to10(-7) Omega(-1) cm(-1) at both substrate temperatures. The most conductive nanocrystalline films deposited at 100 degreesC have n- and p-type dark conductivity at room temperature above 10(-2) Omega(-1) cm(-1) while nanocrystalline films deposited at 25 degreesC only have p-type conductivity higher than 10(-2) Omega(-1) cm(-1) at room temperature. Isochronal annealing at temperatures up to 300 degreesC showed that the dopants are fully activated at the deposition temperature in doped nanocrystalline samples and that they are only partially activated in amorphous films deposited at low substrate temperatures.Fundação para a Ciência e Tecnologia (FCT) Universidade do Minho (UM)AIP PublishingUniversidade do MinhoAlpuim, P.Chu, V.Conde, J. P.2003-072003-07-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/5555eng"Journal of vacuum science & technology A". ISSN 0734-2101. 21:4 (July 2003) 1084-1054.0734-210110.1116/1.1586275http://scitation.aip.org/jvsta/info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T11:57:23Zoai:repositorium.sdum.uminho.pt:1822/5555Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T18:47:02.694056Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
title Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
spellingShingle Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
Alpuim, P.
Thin-film transistors
A-SI-H
Microcrystalline Silicon
Hydrogen
Boron
Raman
Science & Technology
title_short Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
title_full Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
title_fullStr Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
title_full_unstemmed Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
title_sort Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
author Alpuim, P.
author_facet Alpuim, P.
Chu, V.
Conde, J. P.
author_role author
author2 Chu, V.
Conde, J. P.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Alpuim, P.
Chu, V.
Conde, J. P.
dc.subject.por.fl_str_mv Thin-film transistors
A-SI-H
Microcrystalline Silicon
Hydrogen
Boron
Raman
Science & Technology
topic Thin-film transistors
A-SI-H
Microcrystalline Silicon
Hydrogen
Boron
Raman
Science & Technology
description The gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: 25 degreesC and 100 degreesC. Films were deposited by radio-frequency plasma-enhanced chemical vapor deposition using phosphine or diborane for n- or p-type doping, respectively. Similar electronic and structural properties are obtained for the doped films deposited on either substrate. Hydrogen dilution of silane is used to improve the electronic and structural properties of the amorphous films and to obtain nanocrystalline films. The most conductive amorphous films have n-type dark conductivity at room temperature similar to10(-3) Omega(-1) cm(-1) and similar to10(-5) Omega(-1) cm(-1) when deposited at 100degreesC and 25degreesC, respectively, or p-type room-temperature dark conductivity similar to10(-7) Omega(-1) cm(-1) at both substrate temperatures. The most conductive nanocrystalline films deposited at 100 degreesC have n- and p-type dark conductivity at room temperature above 10(-2) Omega(-1) cm(-1) while nanocrystalline films deposited at 25 degreesC only have p-type conductivity higher than 10(-2) Omega(-1) cm(-1) at room temperature. Isochronal annealing at temperatures up to 300 degreesC showed that the dopants are fully activated at the deposition temperature in doped nanocrystalline samples and that they are only partially activated in amorphous films deposited at low substrate temperatures.
publishDate 2003
dc.date.none.fl_str_mv 2003-07
2003-07-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/5555
url http://hdl.handle.net/1822/5555
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv "Journal of vacuum science & technology A". ISSN 0734-2101. 21:4 (July 2003) 1084-1054.
0734-2101
10.1116/1.1586275
http://scitation.aip.org/jvsta/
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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