Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption

Detalhes bibliográficos
Autor(a) principal: Gassa,L.M.
Data de Publicação: 2004
Outros Autores: Luna,A.M. Castro, Sánchez,R.M. Torres, Zerbino,J.O.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042004000200002
Resumo: The semiconducting properties of anodic passive films formed on polycrystalline copper in aqueous borax solutions, pH 9.2, are studied using electrochemical impedance spectroscopy (EIS) and voltammetry. The semiconducting nature of the cuprous passive layer is analysed in the potential region near de rest potential as a function of the electrode potential and the presence of CO dissolved in the electrolyte. The oxide formation is explained as a sequence of Cu2O growth, cation adsorption, Cu(II), and dissolution steps similarly to previous reported investigationsfor the metal in CO free solutions. The different growth conditions change the defect or excess of cations accumulated in the outer side of the cuprous layer/electrolyte interface leading to different semiconducting properties.
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spelling Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorptioncopper oxidecarbon monoxideEISisoelectric pointsemiconducting propertiesThe semiconducting properties of anodic passive films formed on polycrystalline copper in aqueous borax solutions, pH 9.2, are studied using electrochemical impedance spectroscopy (EIS) and voltammetry. The semiconducting nature of the cuprous passive layer is analysed in the potential region near de rest potential as a function of the electrode potential and the presence of CO dissolved in the electrolyte. The oxide formation is explained as a sequence of Cu2O growth, cation adsorption, Cu(II), and dissolution steps similarly to previous reported investigationsfor the metal in CO free solutions. The different growth conditions change the defect or excess of cations accumulated in the outer side of the cuprous layer/electrolyte interface leading to different semiconducting properties.Sociedade Portuguesa de Electroquímica2004-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articletext/htmlhttp://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042004000200002Portugaliae Electrochimica Acta v.22 n.2 2004reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAPenghttp://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042004000200002Gassa,L.M.Luna,A.M. CastroSánchez,R.M. TorresZerbino,J.O.info:eu-repo/semantics/openAccess2023-07-27T12:23:14ZPortal AgregadorONG
dc.title.none.fl_str_mv Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
title Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
spellingShingle Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
Gassa,L.M.
copper oxide
carbon monoxide
EIS
isoelectric point
semiconducting properties
title_short Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
title_full Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
title_fullStr Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
title_full_unstemmed Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
title_sort Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption
author Gassa,L.M.
author_facet Gassa,L.M.
Luna,A.M. Castro
Sánchez,R.M. Torres
Zerbino,J.O.
author_role author
author2 Luna,A.M. Castro
Sánchez,R.M. Torres
Zerbino,J.O.
author2_role author
author
author
dc.contributor.author.fl_str_mv Gassa,L.M.
Luna,A.M. Castro
Sánchez,R.M. Torres
Zerbino,J.O.
dc.subject.por.fl_str_mv copper oxide
carbon monoxide
EIS
isoelectric point
semiconducting properties
topic copper oxide
carbon monoxide
EIS
isoelectric point
semiconducting properties
description The semiconducting properties of anodic passive films formed on polycrystalline copper in aqueous borax solutions, pH 9.2, are studied using electrochemical impedance spectroscopy (EIS) and voltammetry. The semiconducting nature of the cuprous passive layer is analysed in the potential region near de rest potential as a function of the electrode potential and the presence of CO dissolved in the electrolyte. The oxide formation is explained as a sequence of Cu2O growth, cation adsorption, Cu(II), and dissolution steps similarly to previous reported investigationsfor the metal in CO free solutions. The different growth conditions change the defect or excess of cations accumulated in the outer side of the cuprous layer/electrolyte interface leading to different semiconducting properties.
publishDate 2004
dc.date.none.fl_str_mv 2004-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042004000200002
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dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042004000200002
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Portuguesa de Electroquímica
publisher.none.fl_str_mv Sociedade Portuguesa de Electroquímica
dc.source.none.fl_str_mv Portugaliae Electrochimica Acta v.22 n.2 2004
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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