Deposition of diamond films on single crystalline silicon carbide substrates
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/36992 |
Resumo: | Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy. |
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Deposition of diamond films on single crystalline silicon carbide substratesDND seedingCVD diamondDevice passivationSiCSilicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.Elsevier2023-04-13T14:26:22Z2020-01-01T00:00:00Z2020-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/36992eng0925-963510.1016/j.diamond.2019.107625Mukherjee, DebaratiOliveira, FilipeTrippe, Simone CamargoRotter, ShlomoNeto, MiguelSilva, RuiMallik, Awadesh KumarHaenen, KenZetterling, Carl-MikaelMendes, Joana Catarinainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T12:11:21Zoai:ria.ua.pt:10773/36992Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:07:40.396801Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Deposition of diamond films on single crystalline silicon carbide substrates |
title |
Deposition of diamond films on single crystalline silicon carbide substrates |
spellingShingle |
Deposition of diamond films on single crystalline silicon carbide substrates Mukherjee, Debarati DND seeding CVD diamond Device passivation SiC |
title_short |
Deposition of diamond films on single crystalline silicon carbide substrates |
title_full |
Deposition of diamond films on single crystalline silicon carbide substrates |
title_fullStr |
Deposition of diamond films on single crystalline silicon carbide substrates |
title_full_unstemmed |
Deposition of diamond films on single crystalline silicon carbide substrates |
title_sort |
Deposition of diamond films on single crystalline silicon carbide substrates |
author |
Mukherjee, Debarati |
author_facet |
Mukherjee, Debarati Oliveira, Filipe Trippe, Simone Camargo Rotter, Shlomo Neto, Miguel Silva, Rui Mallik, Awadesh Kumar Haenen, Ken Zetterling, Carl-Mikael Mendes, Joana Catarina |
author_role |
author |
author2 |
Oliveira, Filipe Trippe, Simone Camargo Rotter, Shlomo Neto, Miguel Silva, Rui Mallik, Awadesh Kumar Haenen, Ken Zetterling, Carl-Mikael Mendes, Joana Catarina |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Mukherjee, Debarati Oliveira, Filipe Trippe, Simone Camargo Rotter, Shlomo Neto, Miguel Silva, Rui Mallik, Awadesh Kumar Haenen, Ken Zetterling, Carl-Mikael Mendes, Joana Catarina |
dc.subject.por.fl_str_mv |
DND seeding CVD diamond Device passivation SiC |
topic |
DND seeding CVD diamond Device passivation SiC |
description |
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-01-01T00:00:00Z 2020-01 2023-04-13T14:26:22Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/36992 |
url |
http://hdl.handle.net/10773/36992 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0925-9635 10.1016/j.diamond.2019.107625 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799137731178135552 |