Strontium ferromolybdate-based magnetic tunnel junctions
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/33963 |
Resumo: | Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field. |
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Strontium ferromolybdate-based magnetic tunnel junctionsMagnetic tunnel junctionStrontium ferromolybdateTunnel barrier materialSurface roughnessInterface layersTunnel magnetoresistanceThin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field.MDPI2022-05-25T17:53:31Z2022-03-01T00:00:00Z2022-03-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/33963eng10.3390/app12052717Suchaneck, GunnarArtiukh, EvgeniiSobolev, Nikolai A.Telesh, EugeneKalanda, NikolayKiselev, Dmitry A.Ilina, Tatiana S.Gerlach, Geraldinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T12:04:26Zoai:ria.ua.pt:10773/33963Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:04:54.830841Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Strontium ferromolybdate-based magnetic tunnel junctions |
title |
Strontium ferromolybdate-based magnetic tunnel junctions |
spellingShingle |
Strontium ferromolybdate-based magnetic tunnel junctions Suchaneck, Gunnar Magnetic tunnel junction Strontium ferromolybdate Tunnel barrier material Surface roughness Interface layers Tunnel magnetoresistance |
title_short |
Strontium ferromolybdate-based magnetic tunnel junctions |
title_full |
Strontium ferromolybdate-based magnetic tunnel junctions |
title_fullStr |
Strontium ferromolybdate-based magnetic tunnel junctions |
title_full_unstemmed |
Strontium ferromolybdate-based magnetic tunnel junctions |
title_sort |
Strontium ferromolybdate-based magnetic tunnel junctions |
author |
Suchaneck, Gunnar |
author_facet |
Suchaneck, Gunnar Artiukh, Evgenii Sobolev, Nikolai A. Telesh, Eugene Kalanda, Nikolay Kiselev, Dmitry A. Ilina, Tatiana S. Gerlach, Gerald |
author_role |
author |
author2 |
Artiukh, Evgenii Sobolev, Nikolai A. Telesh, Eugene Kalanda, Nikolay Kiselev, Dmitry A. Ilina, Tatiana S. Gerlach, Gerald |
author2_role |
author author author author author author author |
dc.contributor.author.fl_str_mv |
Suchaneck, Gunnar Artiukh, Evgenii Sobolev, Nikolai A. Telesh, Eugene Kalanda, Nikolay Kiselev, Dmitry A. Ilina, Tatiana S. Gerlach, Gerald |
dc.subject.por.fl_str_mv |
Magnetic tunnel junction Strontium ferromolybdate Tunnel barrier material Surface roughness Interface layers Tunnel magnetoresistance |
topic |
Magnetic tunnel junction Strontium ferromolybdate Tunnel barrier material Surface roughness Interface layers Tunnel magnetoresistance |
description |
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-05-25T17:53:31Z 2022-03-01T00:00:00Z 2022-03-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/33963 |
url |
http://hdl.handle.net/10773/33963 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.3390/app12052717 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
MDPI |
publisher.none.fl_str_mv |
MDPI |
dc.source.none.fl_str_mv |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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