Modeling of light-sensitive resonant-tunneling-diode devices

Detalhes bibliográficos
Autor(a) principal: Coelho, I. J. S.
Data de Publicação: 2004
Outros Autores: Figueiredo, J. M. L., Ironside, C. N.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/1184
Resumo: We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
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spelling Modeling of light-sensitive resonant-tunneling-diode devicesWe present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental resultsSapientiaCoelho, I. J. S.Figueiredo, J. M. L.Ironside, C. N.2012-05-31T18:33:26Z20042012-05-11T12:41:43Z2004-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/1184engCoelho, I. J. S.; Figueiredo, José M. L.; Ironside, C.N.Modeling of light-sensitive resonant-tunneling-diode devices, Journal of Applied Physics, 95, 12, 8258-8263, 2004.00218979AUT: JLO01539;info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:12:11Zoai:sapientia.ualg.pt:10400.1/1184Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:55:23.898294Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Modeling of light-sensitive resonant-tunneling-diode devices
title Modeling of light-sensitive resonant-tunneling-diode devices
spellingShingle Modeling of light-sensitive resonant-tunneling-diode devices
Coelho, I. J. S.
title_short Modeling of light-sensitive resonant-tunneling-diode devices
title_full Modeling of light-sensitive resonant-tunneling-diode devices
title_fullStr Modeling of light-sensitive resonant-tunneling-diode devices
title_full_unstemmed Modeling of light-sensitive resonant-tunneling-diode devices
title_sort Modeling of light-sensitive resonant-tunneling-diode devices
author Coelho, I. J. S.
author_facet Coelho, I. J. S.
Figueiredo, J. M. L.
Ironside, C. N.
author_role author
author2 Figueiredo, J. M. L.
Ironside, C. N.
author2_role author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Coelho, I. J. S.
Figueiredo, J. M. L.
Ironside, C. N.
description We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
publishDate 2004
dc.date.none.fl_str_mv 2004
2004-01-01T00:00:00Z
2012-05-31T18:33:26Z
2012-05-11T12:41:43Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/1184
url http://hdl.handle.net/10400.1/1184
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Coelho, I. J. S.; Figueiredo, José M. L.; Ironside, C.N.Modeling of light-sensitive resonant-tunneling-diode devices, Journal of Applied Physics, 95, 12, 8258-8263, 2004.
00218979
AUT: JLO01539;
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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