Study of trap states in zinc oxide (ZnO) thin films for electronic applications

Detalhes bibliográficos
Autor(a) principal: Casteleiro, C.
Data de Publicação: 2008
Outros Autores: Gomes, Henrique L., Stallinga, Peter, Bentes, L., Ayouchi, R., Schwarz, R.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/3298
Resumo: The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.
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spelling Study of trap states in zinc oxide (ZnO) thin films for electronic applicationsThin film transistorsThermally stimulated and depolarization currentLaser depositionDefectsThe electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.ElsevierSapientiaCasteleiro, C.Gomes, Henrique L.Stallinga, PeterBentes, L.Ayouchi, R.Schwarz, R.2014-01-08T09:56:45Z20082014-01-02T21:36:11Z2008-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/3298eng0022-3093AUT: HGO00803; PJO01566;http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.059info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-11-29T10:55:05Zoai:sapientia.ualg.pt:10400.1/3298Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-11-29T10:55:05Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Study of trap states in zinc oxide (ZnO) thin films for electronic applications
title Study of trap states in zinc oxide (ZnO) thin films for electronic applications
spellingShingle Study of trap states in zinc oxide (ZnO) thin films for electronic applications
Casteleiro, C.
Thin film transistors
Thermally stimulated and depolarization current
Laser deposition
Defects
title_short Study of trap states in zinc oxide (ZnO) thin films for electronic applications
title_full Study of trap states in zinc oxide (ZnO) thin films for electronic applications
title_fullStr Study of trap states in zinc oxide (ZnO) thin films for electronic applications
title_full_unstemmed Study of trap states in zinc oxide (ZnO) thin films for electronic applications
title_sort Study of trap states in zinc oxide (ZnO) thin films for electronic applications
author Casteleiro, C.
author_facet Casteleiro, C.
Gomes, Henrique L.
Stallinga, Peter
Bentes, L.
Ayouchi, R.
Schwarz, R.
author_role author
author2 Gomes, Henrique L.
Stallinga, Peter
Bentes, L.
Ayouchi, R.
Schwarz, R.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Casteleiro, C.
Gomes, Henrique L.
Stallinga, Peter
Bentes, L.
Ayouchi, R.
Schwarz, R.
dc.subject.por.fl_str_mv Thin film transistors
Thermally stimulated and depolarization current
Laser deposition
Defects
topic Thin film transistors
Thermally stimulated and depolarization current
Laser deposition
Defects
description The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.
publishDate 2008
dc.date.none.fl_str_mv 2008
2008-01-01T00:00:00Z
2014-01-08T09:56:45Z
2014-01-02T21:36:11Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/3298
url http://hdl.handle.net/10400.1/3298
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0022-3093
AUT: HGO00803; PJO01566;
http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.059
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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