Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/48549 |
Resumo: | Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene. |
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Chemical vapour deposition of hexagonal boron nitride for two dimensional electronicsHexagonal Boron NitrideChemical Vapor DepositionAmmonia boraneGraphene electronicsCiências Naturais::Ciências FísicasEngenharia e Tecnologia::Engenharia dos MateriaisEngenharia e Tecnologia::NanotecnologiaHexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.info:eu-repo/semantics/publishedVersionUniversidade do Porto. Faculdade de Engenharia (FEUP)Universidade do MinhoSompalle, BalajiBorme, JérômeCerqueira, FátimaSun, TangyouCampos, RuiAlpuim, P.2017-11-242017-11-24T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/48549eng2183-64932183-649310.24840/2183-6493.003.003.0003https://journalengineering.fe.up.pt/article/view/429info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:02:49Zoai:repositorium.sdum.uminho.pt:1822/48549Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T18:52:52.974774Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
title |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
spellingShingle |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics Sompalle, Balaji Hexagonal Boron Nitride Chemical Vapor Deposition Ammonia borane Graphene electronics Ciências Naturais::Ciências Físicas Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia |
title_short |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
title_full |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
title_fullStr |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
title_full_unstemmed |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
title_sort |
Chemical vapour deposition of hexagonal boron nitride for two dimensional electronics |
author |
Sompalle, Balaji |
author_facet |
Sompalle, Balaji Borme, Jérôme Cerqueira, Fátima Sun, Tangyou Campos, Rui Alpuim, P. |
author_role |
author |
author2 |
Borme, Jérôme Cerqueira, Fátima Sun, Tangyou Campos, Rui Alpuim, P. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Sompalle, Balaji Borme, Jérôme Cerqueira, Fátima Sun, Tangyou Campos, Rui Alpuim, P. |
dc.subject.por.fl_str_mv |
Hexagonal Boron Nitride Chemical Vapor Deposition Ammonia borane Graphene electronics Ciências Naturais::Ciências Físicas Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia |
topic |
Hexagonal Boron Nitride Chemical Vapor Deposition Ammonia borane Graphene electronics Ciências Naturais::Ciências Físicas Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia |
description |
Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-11-24 2017-11-24T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/48549 |
url |
http://hdl.handle.net/1822/48549 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2183-6493 2183-6493 10.24840/2183-6493.003.003.0003 https://journalengineering.fe.up.pt/article/view/429 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Universidade do Porto. Faculdade de Engenharia (FEUP) |
publisher.none.fl_str_mv |
Universidade do Porto. Faculdade de Engenharia (FEUP) |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799132305787191296 |