Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers

Detalhes bibliográficos
Autor(a) principal: Almeida, B. G.
Data de Publicação: 1999
Outros Autores: Amaral, V. S., Sousa, J. B., Colino, R., Schuller, I. K., Moschalkov, V. V., Bruynseraede, Y.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/85686
Resumo: High-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally.
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spelling Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayersCiências Naturais::Ciências FísicasScience & TechnologyHigh-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally.American Institute of PhysicsUniversidade do MinhoAlmeida, B. G.Amaral, V. S.Sousa, J. B.Colino, R.Schuller, I. K.Moschalkov, V. V.Bruynseraede, Y.19991999-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/85686engAlmeida, B. G., Amaral, V. S., Sousa, J. B., Colino, R., Schuller, I. K., Moschalkov, V. V., & Bruynseraede, Y. (1999, April 15). Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers. Journal of Applied Physics. AIP Publishing. http://doi.org/10.1063/1.3703650021-897910.1063/1.370365https://pubs.aip.org/aip/jap/article/85/8/4433/289618/Simulation-of-the-interband-s-d-and-intraband-s-sinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-29T01:20:27Zoai:repositorium.sdum.uminho.pt:1822/85686Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:10:03.127045Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
title Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
spellingShingle Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
Almeida, B. G.
Ciências Naturais::Ciências Físicas
Science & Technology
title_short Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
title_full Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
title_fullStr Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
title_full_unstemmed Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
title_sort Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
author Almeida, B. G.
author_facet Almeida, B. G.
Amaral, V. S.
Sousa, J. B.
Colino, R.
Schuller, I. K.
Moschalkov, V. V.
Bruynseraede, Y.
author_role author
author2 Amaral, V. S.
Sousa, J. B.
Colino, R.
Schuller, I. K.
Moschalkov, V. V.
Bruynseraede, Y.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Almeida, B. G.
Amaral, V. S.
Sousa, J. B.
Colino, R.
Schuller, I. K.
Moschalkov, V. V.
Bruynseraede, Y.
dc.subject.por.fl_str_mv Ciências Naturais::Ciências Físicas
Science & Technology
topic Ciências Naturais::Ciências Físicas
Science & Technology
description High-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/85686
url https://hdl.handle.net/1822/85686
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Almeida, B. G., Amaral, V. S., Sousa, J. B., Colino, R., Schuller, I. K., Moschalkov, V. V., & Bruynseraede, Y. (1999, April 15). Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers. Journal of Applied Physics. AIP Publishing. http://doi.org/10.1063/1.370365
0021-8979
10.1063/1.370365
https://pubs.aip.org/aip/jap/article/85/8/4433/289618/Simulation-of-the-interband-s-d-and-intraband-s-s
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
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