Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/85686 |
Resumo: | High-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally. |
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Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayersCiências Naturais::Ciências FísicasScience & TechnologyHigh-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally.American Institute of PhysicsUniversidade do MinhoAlmeida, B. G.Amaral, V. S.Sousa, J. B.Colino, R.Schuller, I. K.Moschalkov, V. V.Bruynseraede, Y.19991999-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/85686engAlmeida, B. G., Amaral, V. S., Sousa, J. B., Colino, R., Schuller, I. K., Moschalkov, V. V., & Bruynseraede, Y. (1999, April 15). Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers. Journal of Applied Physics. AIP Publishing. http://doi.org/10.1063/1.3703650021-897910.1063/1.370365https://pubs.aip.org/aip/jap/article/85/8/4433/289618/Simulation-of-the-interband-s-d-and-intraband-s-sinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T05:55:11Zoai:repositorium.sdum.uminho.pt:1822/85686Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T05:55:11Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
title |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
spellingShingle |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers Almeida, B. G. Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
title_full |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
title_fullStr |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
title_full_unstemmed |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
title_sort |
Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers |
author |
Almeida, B. G. |
author_facet |
Almeida, B. G. Amaral, V. S. Sousa, J. B. Colino, R. Schuller, I. K. Moschalkov, V. V. Bruynseraede, Y. |
author_role |
author |
author2 |
Amaral, V. S. Sousa, J. B. Colino, R. Schuller, I. K. Moschalkov, V. V. Bruynseraede, Y. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Almeida, B. G. Amaral, V. S. Sousa, J. B. Colino, R. Schuller, I. K. Moschalkov, V. V. Bruynseraede, Y. |
dc.subject.por.fl_str_mv |
Ciências Naturais::Ciências Físicas Science & Technology |
topic |
Ciências Naturais::Ciências Físicas Science & Technology |
description |
High-resolution electrical resistivity (rho, d rho/dT) measurements were performed in three series of [Fe-30 Cr-Angstrom(t) (Angstrom)] multilayers in the temperature range 15-300 K, with an applied magnetic saturation field (7.5 kOe). The samples were deposited by molecular beam epitaxy on MgO substrates and by sputtering on MgO and Si substrates. For T < 50 K the ideal resistivity follows rho(i) = beta T-3, indicating the dominance of phonon-assisted interband s-d scattering in this temperature range. For T >150 K the resistivity attains the classical regime with rho proportional to T. To simulate the observed rho(i)(T) we have used a model that takes into account intraband s-s and interband s-d electron-phonon scattering, written as rho(sd) = A X f(1)(T) and rho(ss) = B X f(2)(T), where f(1) and f(2) are functions only of the temperature, A and B are sample-dependent constants and rho(i) = rho(sd) + rho(ss). The model predicts that rho(i) proportional to T-3 at low temperatures and rho(i) proportional to T at high temperatures as observed in our multilayers. The experimental curves of rho(i) and d rho/dT are well reproduced in the whole temperature range (15-300 K) and from the fits to these curves A and B are determined for each sample. By plotting B vs A we find that each point from all the multilayers falls in a straight line indicating that B is proportional to A. The simulated resistivity thus predicts that rho(i) = beta f(T) where f(T) = alpha(1) x f(1)(T) + alpha(2) x f(2)(T) is a function only of the temperature, as observed experimentally. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999 1999-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/85686 |
url |
https://hdl.handle.net/1822/85686 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Almeida, B. G., Amaral, V. S., Sousa, J. B., Colino, R., Schuller, I. K., Moschalkov, V. V., & Bruynseraede, Y. (1999, April 15). Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers. Journal of Applied Physics. AIP Publishing. http://doi.org/10.1063/1.370365 0021-8979 10.1063/1.370365 https://pubs.aip.org/aip/jap/article/85/8/4433/289618/Simulation-of-the-interband-s-d-and-intraband-s-s |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
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1817544786036391936 |