Metal Halide Perovskite Quantum Dots for Thin-Film Transistors
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/141862 |
Resumo: | The re-emergence of metal halide perovskites has been revolutionizing the optoelectronic field, particularly photovoltaics, where within just a few years, remarkable power conversion efficiencies over 28% have been achieved. However, we turn our attention to exploiting perovskites for the production of thin-film transistors (TFTs), owing to their high solution processability and excellent transport characteristics, whilst aiming to overcome their shortcomings, deeply interconnected to their poor stability. In this work, two different organic lead halide perovskite quantum dot (QD) compounds were synthesized, FAPbBr3 and FAPbI3, yielding exceptional photo-physical properties with green and near-infrared (NIR) emission, respectively. A novel synthesis method for the FAPbI3 QDs was carried out, which revealed extremely stable nanocrystals (NCs) with very bright photoluminescence. For FAPbBr3, two different synthesis methods established in the literature were undertaken and compared, resulting in devices exhibiting photogating characteristics, with ILight /IDark ratios over 103, and field effect mobilities of 1.63×10−3 and 2.06 cm2 V−1 s−1, in dark and light environments, respectively. Additionally, novel state-resolved behaviour was observed, indicating band-like charge transport through the discrete QD states, accredited to smaller particles, implying high-quality, monodisperse QDs, which can provide critical insight on the nature of these materials. |
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Metal Halide Perovskite Quantum Dots for Thin-Film TransistorsQuantum DotsMetal Halide PerovskiteTFTState-ResolvedHigh PhotoluminescenceDomínio/Área Científica::Engenharia e Tecnologia::NanotecnologiaThe re-emergence of metal halide perovskites has been revolutionizing the optoelectronic field, particularly photovoltaics, where within just a few years, remarkable power conversion efficiencies over 28% have been achieved. However, we turn our attention to exploiting perovskites for the production of thin-film transistors (TFTs), owing to their high solution processability and excellent transport characteristics, whilst aiming to overcome their shortcomings, deeply interconnected to their poor stability. In this work, two different organic lead halide perovskite quantum dot (QD) compounds were synthesized, FAPbBr3 and FAPbI3, yielding exceptional photo-physical properties with green and near-infrared (NIR) emission, respectively. A novel synthesis method for the FAPbI3 QDs was carried out, which revealed extremely stable nanocrystals (NCs) with very bright photoluminescence. For FAPbBr3, two different synthesis methods established in the literature were undertaken and compared, resulting in devices exhibiting photogating characteristics, with ILight /IDark ratios over 103, and field effect mobilities of 1.63×10−3 and 2.06 cm2 V−1 s−1, in dark and light environments, respectively. Additionally, novel state-resolved behaviour was observed, indicating band-like charge transport through the discrete QD states, accredited to smaller particles, implying high-quality, monodisperse QDs, which can provide critical insight on the nature of these materials.A emergência das estruturas de perovskite de metais e halogenetos tem revolucionado a área da optoelectrónica, particularmente a fotovoltaica, onde em muito poucos anos, excelentes eficiências de conversão de energia, acima dos 28% foram alcançadas. Contudo, neste trabalho focamo-nos em explorar as perovskites para a produção de transístores de filme-fino (TFT), devido ao seu alto processamento em solução e excelentes características de transporte de cargas, tentando ao mesmo tempo, ultrapassar as suas desvantagens, relacionadas fortemente com a sua fraca estabilidade. Neste trabalho, dois diferentes compostos de quantum dots (QD) de perovskites orgânicas, metálicas e halogenadas foram sintetizadas, FAPbBr3 e FAPbI3, resultando em nanocristais (NCs) com excelentes propriedades foto-físicas, e emissão na região verde e no infravermelho próximo (NIR), respetivamente. Um novo método para sintetizar QDs de FAPbI3 foi utilizado, revelando NCs extremamente estáveis e luminescentes. Para o caso dos QDs de FAPbBr3, dois métodos diferentes já estabelecidos na literatura foram testados e comparados, resultando em transístores que exibem o efeito de photogating, com rácios ILight /IDark acima da ordem dos 103, e mobilidades de efeito de campo de 1.63×10−3 e 2.06 cm2 V−1 s−1, em ambientes escuros e iluminados, respetivamente. Para além disto, comportamento state-resolved foi observado, indicando transporte de cargas através de estados discretos dos QDs, atribuído à influência das partículas mais pequenas, inferindo a existência de QDs de alta qualidade e monodispersos, proporcionando informação crítica sobre a natureza destes materiais.Jana, SantanuBarquinha, PedroRUNFerreira, Rodrigo Lourenço do Espírito Santo Rosa2022-07-14T10:43:56Z2022-022022-02-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/141862enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:19:01Zoai:run.unl.pt:10362/141862Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:50:03.358603Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
title |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
spellingShingle |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors Ferreira, Rodrigo Lourenço do Espírito Santo Rosa Quantum Dots Metal Halide Perovskite TFT State-Resolved High Photoluminescence Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
title_short |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
title_full |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
title_fullStr |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
title_full_unstemmed |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
title_sort |
Metal Halide Perovskite Quantum Dots for Thin-Film Transistors |
author |
Ferreira, Rodrigo Lourenço do Espírito Santo Rosa |
author_facet |
Ferreira, Rodrigo Lourenço do Espírito Santo Rosa |
author_role |
author |
dc.contributor.none.fl_str_mv |
Jana, Santanu Barquinha, Pedro RUN |
dc.contributor.author.fl_str_mv |
Ferreira, Rodrigo Lourenço do Espírito Santo Rosa |
dc.subject.por.fl_str_mv |
Quantum Dots Metal Halide Perovskite TFT State-Resolved High Photoluminescence Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
topic |
Quantum Dots Metal Halide Perovskite TFT State-Resolved High Photoluminescence Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
description |
The re-emergence of metal halide perovskites has been revolutionizing the optoelectronic field, particularly photovoltaics, where within just a few years, remarkable power conversion efficiencies over 28% have been achieved. However, we turn our attention to exploiting perovskites for the production of thin-film transistors (TFTs), owing to their high solution processability and excellent transport characteristics, whilst aiming to overcome their shortcomings, deeply interconnected to their poor stability. In this work, two different organic lead halide perovskite quantum dot (QD) compounds were synthesized, FAPbBr3 and FAPbI3, yielding exceptional photo-physical properties with green and near-infrared (NIR) emission, respectively. A novel synthesis method for the FAPbI3 QDs was carried out, which revealed extremely stable nanocrystals (NCs) with very bright photoluminescence. For FAPbBr3, two different synthesis methods established in the literature were undertaken and compared, resulting in devices exhibiting photogating characteristics, with ILight /IDark ratios over 103, and field effect mobilities of 1.63×10−3 and 2.06 cm2 V−1 s−1, in dark and light environments, respectively. Additionally, novel state-resolved behaviour was observed, indicating band-like charge transport through the discrete QD states, accredited to smaller particles, implying high-quality, monodisperse QDs, which can provide critical insight on the nature of these materials. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-07-14T10:43:56Z 2022-02 2022-02-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/141862 |
url |
http://hdl.handle.net/10362/141862 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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