Growth pressure dependence of Cu2ZnSnSe4 properties

Detalhes bibliográficos
Autor(a) principal: Salomé, P. M. P.
Data de Publicação: 2010
Outros Autores: Fernandes, P. A., Cunha, A. F. da, Leitão, J. P., Malaquias, J., Weber, A., González, J. C., Silva, M. I. N. da
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.22/3386
Resumo: In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.
id RCAP_8677bf0c377fdb576c22e47bdcb0a7d7
oai_identifier_str oai:recipp.ipp.pt:10400.22/3386
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Growth pressure dependence of Cu2ZnSnSe4 propertiesCu2ZnSnSe4CZTSeSelenizationThin filmsChalcogenidesSolar cell absorberIn this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.ElsevierRepositório Científico do Instituto Politécnico do PortoSalomé, P. M. P.Fernandes, P. A.Cunha, A. F. daLeitão, J. P.Malaquias, J.Weber, A.González, J. C.Silva, M. I. N. da2014-01-21T10:37:53Z20102010-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/3386eng0927-024810.1016/j.solmat.2010.07.008info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T12:43:11Zoai:recipp.ipp.pt:10400.22/3386Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:24:23.021735Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Growth pressure dependence of Cu2ZnSnSe4 properties
title Growth pressure dependence of Cu2ZnSnSe4 properties
spellingShingle Growth pressure dependence of Cu2ZnSnSe4 properties
Salomé, P. M. P.
Cu2ZnSnSe4
CZTSe
Selenization
Thin films
Chalcogenides
Solar cell absorber
title_short Growth pressure dependence of Cu2ZnSnSe4 properties
title_full Growth pressure dependence of Cu2ZnSnSe4 properties
title_fullStr Growth pressure dependence of Cu2ZnSnSe4 properties
title_full_unstemmed Growth pressure dependence of Cu2ZnSnSe4 properties
title_sort Growth pressure dependence of Cu2ZnSnSe4 properties
author Salomé, P. M. P.
author_facet Salomé, P. M. P.
Fernandes, P. A.
Cunha, A. F. da
Leitão, J. P.
Malaquias, J.
Weber, A.
González, J. C.
Silva, M. I. N. da
author_role author
author2 Fernandes, P. A.
Cunha, A. F. da
Leitão, J. P.
Malaquias, J.
Weber, A.
González, J. C.
Silva, M. I. N. da
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Repositório Científico do Instituto Politécnico do Porto
dc.contributor.author.fl_str_mv Salomé, P. M. P.
Fernandes, P. A.
Cunha, A. F. da
Leitão, J. P.
Malaquias, J.
Weber, A.
González, J. C.
Silva, M. I. N. da
dc.subject.por.fl_str_mv Cu2ZnSnSe4
CZTSe
Selenization
Thin films
Chalcogenides
Solar cell absorber
topic Cu2ZnSnSe4
CZTSe
Selenization
Thin films
Chalcogenides
Solar cell absorber
description In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-01-01T00:00:00Z
2014-01-21T10:37:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.22/3386
url http://hdl.handle.net/10400.22/3386
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0927-0248
10.1016/j.solmat.2010.07.008
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1817551785580036096

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