Optical doping of nitrides by ion implantation
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/11797 |
Resumo: | A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after rapid thermal annealing at 1000°C for 2 min. The only exception occurs for Eu, which occupies a Ga displaced site. Annealing at 1200°C in nitrogen atmosphere at a pressure of IGPa is necessary to achieve the complete recovery of the damage in the samples. After annealing the recombination processes of the implanted samples were studied by above and below band gap excitation. For Er implanted samples besides the 1.54 μm emission green and red emissions are also observed. Red emissions from 5D0→7F2 and 3P0→3F2 transitions were found in Eu and Pr implanted samples even at room temperature. |
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7160 |
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Optical doping of nitrides by ion implantationLanthanideA series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after rapid thermal annealing at 1000°C for 2 min. The only exception occurs for Eu, which occupies a Ga displaced site. Annealing at 1200°C in nitrogen atmosphere at a pressure of IGPa is necessary to achieve the complete recovery of the damage in the samples. After annealing the recombination processes of the implanted samples were studied by above and below band gap excitation. For Er implanted samples besides the 1.54 μm emission green and red emissions are also observed. Red emissions from 5D0→7F2 and 3P0→3F2 transitions were found in Eu and Pr implanted samples even at room temperature.World Scientific2014-02-12T10:48:41Z2001-01-01T00:00:00Z2001info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/11797eng0217-984910.1142/S0217984901003172Alves, E.Lorenz, K.Vianden, R.Boemare, C.Soares, M.J.Monteiro, T.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:20:40Zoai:ria.ua.pt:10773/11797Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:47:53.541853Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Optical doping of nitrides by ion implantation |
title |
Optical doping of nitrides by ion implantation |
spellingShingle |
Optical doping of nitrides by ion implantation Alves, E. Lanthanide |
title_short |
Optical doping of nitrides by ion implantation |
title_full |
Optical doping of nitrides by ion implantation |
title_fullStr |
Optical doping of nitrides by ion implantation |
title_full_unstemmed |
Optical doping of nitrides by ion implantation |
title_sort |
Optical doping of nitrides by ion implantation |
author |
Alves, E. |
author_facet |
Alves, E. Lorenz, K. Vianden, R. Boemare, C. Soares, M.J. Monteiro, T. |
author_role |
author |
author2 |
Lorenz, K. Vianden, R. Boemare, C. Soares, M.J. Monteiro, T. |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Alves, E. Lorenz, K. Vianden, R. Boemare, C. Soares, M.J. Monteiro, T. |
dc.subject.por.fl_str_mv |
Lanthanide |
topic |
Lanthanide |
description |
A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after rapid thermal annealing at 1000°C for 2 min. The only exception occurs for Eu, which occupies a Ga displaced site. Annealing at 1200°C in nitrogen atmosphere at a pressure of IGPa is necessary to achieve the complete recovery of the damage in the samples. After annealing the recombination processes of the implanted samples were studied by above and below band gap excitation. For Er implanted samples besides the 1.54 μm emission green and red emissions are also observed. Red emissions from 5D0→7F2 and 3P0→3F2 transitions were found in Eu and Pr implanted samples even at room temperature. |
publishDate |
2001 |
dc.date.none.fl_str_mv |
2001-01-01T00:00:00Z 2001 2014-02-12T10:48:41Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/11797 |
url |
http://hdl.handle.net/10773/11797 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0217-9849 10.1142/S0217984901003172 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
World Scientific |
publisher.none.fl_str_mv |
World Scientific |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137530349617152 |