Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/43627 |
Resumo: | The possibility of direct writing thin semiconductive channels and structures on insulating substrates in a clean room-free process is attractive for its simplicity, cost effectiveness, and possibility of a wide choice of substrates. A broad range of applications, such as large-area electronic devices (touch screens, flexible displays), sensors, or optical wave guides could benefit from such a process. In this work, we directly write on doped hydrogenated amorphous silicon (a-Si:H), with thickness in the range 10 nm–1 μm, using a Nd-YAG laser operating at 532 nm that is part of a Witec Raman confocal system. The contrast in conductivity between the exposed and unexposed areas is so high that the a-Si:H matrix needs not to be removed after exposure. B- and P-doped films were deposited on plastic, glass, and oxidized silicon wafers. The laser power threshold for crystallization was studied. The highest conductivity (886 Ω−1 cm−1) was obtained on wafer. On hard substrates, it is possible to tune the mesoscopic electrical conductivity in a very broad range of values (∼10−4–103) by design of the pattern to be transferred. Patterned films are piezoresistive with gauge factors as high as +18 and −29 for p- and n-type patterns, respectively. SEM image of laser written lines on a 10 nm thick a-Si:H film deposited on a Si/SiO2 substrate. Four regions are clearly distinguishable: the metal contact on the top area; the laser eroded area (lines); the crystallized areas adjacent to lines; the amorphous region at the bottom right. |
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Laser patterning of amorphous silicon thin films deposited on flexible and rigid substratesAmorphous siliconCrystallizationDopant activation,Laser scribingPiezoresistanceCiências Naturais::Ciências FísicasScience & TechnologyThe possibility of direct writing thin semiconductive channels and structures on insulating substrates in a clean room-free process is attractive for its simplicity, cost effectiveness, and possibility of a wide choice of substrates. A broad range of applications, such as large-area electronic devices (touch screens, flexible displays), sensors, or optical wave guides could benefit from such a process. In this work, we directly write on doped hydrogenated amorphous silicon (a-Si:H), with thickness in the range 10 nm–1 μm, using a Nd-YAG laser operating at 532 nm that is part of a Witec Raman confocal system. The contrast in conductivity between the exposed and unexposed areas is so high that the a-Si:H matrix needs not to be removed after exposure. B- and P-doped films were deposited on plastic, glass, and oxidized silicon wafers. The laser power threshold for crystallization was studied. The highest conductivity (886 Ω−1 cm−1) was obtained on wafer. On hard substrates, it is possible to tune the mesoscopic electrical conductivity in a very broad range of values (∼10−4–103) by design of the pattern to be transferred. Patterned films are piezoresistive with gauge factors as high as +18 and −29 for p- and n-type patterns, respectively. SEM image of laser written lines on a 10 nm thick a-Si:H film deposited on a Si/SiO2 substrate. Four regions are clearly distinguishable: the metal contact on the top area; the laser eroded area (lines); the crystallized areas adjacent to lines; the amorphous region at the bottom right.CNPqThe authors acknowledge Witec GmbH for collaboration in disclosing the set of instructions needed to communicate with Witec Four software.WileyUniversidade do MinhoAlpuim, P.Cerqueira, M. F.Iglesias, V.Junior, George Luiz MachadoBorme, J.2016-02-012016-02-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/43627engAlpuim, P., Cerqueira, M. F., Iglesias, V., Machado, G., & Borme, J. (2016). Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates. Physica Status Solidi a-Applications and Materials Science, 213(7), 1717-1727. doi: 10.1002/pssa.2015329801862-631910.1002/pssa.201532980http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532980/abstractinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T11:55:34Zoai:repositorium.sdum.uminho.pt:1822/43627Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T18:45:06.421777Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
title |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
spellingShingle |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates Alpuim, P. Amorphous silicon Crystallization Dopant activation, Laser scribing Piezoresistance Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
title_full |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
title_fullStr |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
title_full_unstemmed |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
title_sort |
Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
author |
Alpuim, P. |
author_facet |
Alpuim, P. Cerqueira, M. F. Iglesias, V. Junior, George Luiz Machado Borme, J. |
author_role |
author |
author2 |
Cerqueira, M. F. Iglesias, V. Junior, George Luiz Machado Borme, J. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Alpuim, P. Cerqueira, M. F. Iglesias, V. Junior, George Luiz Machado Borme, J. |
dc.subject.por.fl_str_mv |
Amorphous silicon Crystallization Dopant activation, Laser scribing Piezoresistance Ciências Naturais::Ciências Físicas Science & Technology |
topic |
Amorphous silicon Crystallization Dopant activation, Laser scribing Piezoresistance Ciências Naturais::Ciências Físicas Science & Technology |
description |
The possibility of direct writing thin semiconductive channels and structures on insulating substrates in a clean room-free process is attractive for its simplicity, cost effectiveness, and possibility of a wide choice of substrates. A broad range of applications, such as large-area electronic devices (touch screens, flexible displays), sensors, or optical wave guides could benefit from such a process. In this work, we directly write on doped hydrogenated amorphous silicon (a-Si:H), with thickness in the range 10 nm–1 μm, using a Nd-YAG laser operating at 532 nm that is part of a Witec Raman confocal system. The contrast in conductivity between the exposed and unexposed areas is so high that the a-Si:H matrix needs not to be removed after exposure. B- and P-doped films were deposited on plastic, glass, and oxidized silicon wafers. The laser power threshold for crystallization was studied. The highest conductivity (886 Ω−1 cm−1) was obtained on wafer. On hard substrates, it is possible to tune the mesoscopic electrical conductivity in a very broad range of values (∼10−4–103) by design of the pattern to be transferred. Patterned films are piezoresistive with gauge factors as high as +18 and −29 for p- and n-type patterns, respectively. SEM image of laser written lines on a 10 nm thick a-Si:H film deposited on a Si/SiO2 substrate. Four regions are clearly distinguishable: the metal contact on the top area; the laser eroded area (lines); the crystallized areas adjacent to lines; the amorphous region at the bottom right. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-02-01 2016-02-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/43627 |
url |
http://hdl.handle.net/1822/43627 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Alpuim, P., Cerqueira, M. F., Iglesias, V., Machado, G., & Borme, J. (2016). Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates. Physica Status Solidi a-Applications and Materials Science, 213(7), 1717-1727. doi: 10.1002/pssa.201532980 1862-6319 10.1002/pssa.201532980 http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532980/abstract |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Wiley |
publisher.none.fl_str_mv |
Wiley |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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