Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

Detalhes bibliográficos
Autor(a) principal: Bory, B. F.
Data de Publicação: 2014
Outros Autores: Wang, J. X., Gomes, Henrique L., Janssen, R. A. J., de Leeuw, D. M., Meskers, S. C. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/6632
Resumo: Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron-hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10(25)/m(3). The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics. (C) 2014 Author(s).
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spelling Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halideElectroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron-hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10(25)/m(3). The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics. (C) 2014 Author(s).American Institute of PhysicsSapientiaBory, B. F.Wang, J. X.Gomes, Henrique L.Janssen, R. A. J.de Leeuw, D. M.Meskers, S. C. J.2015-06-26T14:18:46Z20142014-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/6632eng0003-6951AUT: HGO00803;https://dx.doi.org/10.1063/1.4903831info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:17:48Zoai:sapientia.ualg.pt:10400.1/6632Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:59:16.309856Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
title Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
spellingShingle Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
Bory, B. F.
title_short Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
title_full Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
title_fullStr Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
title_full_unstemmed Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
title_sort Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide
author Bory, B. F.
author_facet Bory, B. F.
Wang, J. X.
Gomes, Henrique L.
Janssen, R. A. J.
de Leeuw, D. M.
Meskers, S. C. J.
author_role author
author2 Wang, J. X.
Gomes, Henrique L.
Janssen, R. A. J.
de Leeuw, D. M.
Meskers, S. C. J.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Bory, B. F.
Wang, J. X.
Gomes, Henrique L.
Janssen, R. A. J.
de Leeuw, D. M.
Meskers, S. C. J.
description Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron-hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10(25)/m(3). The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics. (C) 2014 Author(s).
publishDate 2014
dc.date.none.fl_str_mv 2014
2014-01-01T00:00:00Z
2015-06-26T14:18:46Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/6632
url http://hdl.handle.net/10400.1/6632
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
AUT: HGO00803;
https://dx.doi.org/10.1063/1.4903831
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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