Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes

Detalhes bibliográficos
Autor(a) principal: Vacas, J.
Data de Publicação: 2000
Outros Autores: Lahrèche, H., Monteiro, T., Caspar, C., Pereira, E., Brylinski, C., Di Forte-Poisson, M.A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/6087
Resumo: A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.
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spelling Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodesHomojunction and heterojunction diodeselectroluminescencedeep levelA comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.Trans Tech Publ Ltd2012-02-09T12:13:40Z2000-01-01T00:00:00Z2000info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/6087eng0255-547610.4028/www.scientific.net/MSF.338-342.1651Vacas, J.Lahrèche, H.Monteiro, T.Caspar, C.Pereira, E.Brylinski, C.Di Forte-Poisson, M.A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-17T03:23:45ZPortal AgregadorONG
dc.title.none.fl_str_mv Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
title Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
spellingShingle Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Vacas, J.
Homojunction and heterojunction diodes
electroluminescence
deep level
title_short Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
title_full Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
title_fullStr Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
title_full_unstemmed Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
title_sort Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
author Vacas, J.
author_facet Vacas, J.
Lahrèche, H.
Monteiro, T.
Caspar, C.
Pereira, E.
Brylinski, C.
Di Forte-Poisson, M.A.
author_role author
author2 Lahrèche, H.
Monteiro, T.
Caspar, C.
Pereira, E.
Brylinski, C.
Di Forte-Poisson, M.A.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Vacas, J.
Lahrèche, H.
Monteiro, T.
Caspar, C.
Pereira, E.
Brylinski, C.
Di Forte-Poisson, M.A.
dc.subject.por.fl_str_mv Homojunction and heterojunction diodes
electroluminescence
deep level
topic Homojunction and heterojunction diodes
electroluminescence
deep level
description A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.
publishDate 2000
dc.date.none.fl_str_mv 2000-01-01T00:00:00Z
2000
2012-02-09T12:13:40Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/6087
url http://hdl.handle.net/10773/6087
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0255-5476
10.4028/www.scientific.net/MSF.338-342.1651
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Trans Tech Publ Ltd
publisher.none.fl_str_mv Trans Tech Publ Ltd
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv
repository.mail.fl_str_mv
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