Write-erase and read paper memory transistor
Autor(a) principal: | |
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Data de Publicação: | 2008 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/3962 |
Resumo: | Applied Physics Letters, Vol.93, issue 20 |
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Write-erase and read paper memory transistorApplied Physics Letters, Vol.93, issue 20We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively,complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.American Institute of PhysicsRUNMartins, RodrigoBarquinha, PedroPereira, LuísCorreia, NunoGonçalves, GonçaloFerreira, IsabelFortunato, Elvira2010-07-05T15:11:57Z2008-102008-10-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/3962eng0003-6951info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T03:33:32Zoai:run.unl.pt:10362/3962Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:15:28.181203Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Write-erase and read paper memory transistor |
title |
Write-erase and read paper memory transistor |
spellingShingle |
Write-erase and read paper memory transistor Martins, Rodrigo |
title_short |
Write-erase and read paper memory transistor |
title_full |
Write-erase and read paper memory transistor |
title_fullStr |
Write-erase and read paper memory transistor |
title_full_unstemmed |
Write-erase and read paper memory transistor |
title_sort |
Write-erase and read paper memory transistor |
author |
Martins, Rodrigo |
author_facet |
Martins, Rodrigo Barquinha, Pedro Pereira, Luís Correia, Nuno Gonçalves, Gonçalo Ferreira, Isabel Fortunato, Elvira |
author_role |
author |
author2 |
Barquinha, Pedro Pereira, Luís Correia, Nuno Gonçalves, Gonçalo Ferreira, Isabel Fortunato, Elvira |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
RUN |
dc.contributor.author.fl_str_mv |
Martins, Rodrigo Barquinha, Pedro Pereira, Luís Correia, Nuno Gonçalves, Gonçalo Ferreira, Isabel Fortunato, Elvira |
description |
Applied Physics Letters, Vol.93, issue 20 |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-10 2008-10-01T00:00:00Z 2010-07-05T15:11:57Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/3962 |
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http://hdl.handle.net/10362/3962 |
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eng |
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eng |
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0003-6951 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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