A FEM punch-through IGBT model using an efficient parameter extraction method

Detalhes bibliográficos
Autor(a) principal: Rui Chibante
Data de Publicação: 2005
Outros Autores: Armando Araújo, Adriano Carvalho
Tipo de documento: Livro
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://repositorio-aberto.up.pt/handle/10216/277
Resumo: A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.
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spelling A FEM punch-through IGBT model using an efficient parameter extraction methodEngenharia electrotécnica, Engenharia electrotécnica, electrónica e informáticaElectrical engineering, Electrical engineering, Electronic engineering, Information engineeringA Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.20052005-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/bookapplication/pdfhttps://repositorio-aberto.up.pt/handle/10216/277eng10.1109/iecon.2005.1568986Rui ChibanteArmando AraújoAdriano Carvalhoinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-11-29T16:13:35Zoai:repositorio-aberto.up.pt:10216/277Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T00:39:22.513922Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv A FEM punch-through IGBT model using an efficient parameter extraction method
title A FEM punch-through IGBT model using an efficient parameter extraction method
spellingShingle A FEM punch-through IGBT model using an efficient parameter extraction method
Rui Chibante
Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
title_short A FEM punch-through IGBT model using an efficient parameter extraction method
title_full A FEM punch-through IGBT model using an efficient parameter extraction method
title_fullStr A FEM punch-through IGBT model using an efficient parameter extraction method
title_full_unstemmed A FEM punch-through IGBT model using an efficient parameter extraction method
title_sort A FEM punch-through IGBT model using an efficient parameter extraction method
author Rui Chibante
author_facet Rui Chibante
Armando Araújo
Adriano Carvalho
author_role author
author2 Armando Araújo
Adriano Carvalho
author2_role author
author
dc.contributor.author.fl_str_mv Rui Chibante
Armando Araújo
Adriano Carvalho
dc.subject.por.fl_str_mv Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
topic Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
description A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.
publishDate 2005
dc.date.none.fl_str_mv 2005
2005-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/book
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status_str publishedVersion
dc.identifier.uri.fl_str_mv https://repositorio-aberto.up.pt/handle/10216/277
url https://repositorio-aberto.up.pt/handle/10216/277
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1109/iecon.2005.1568986
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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