Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)

Detalhes bibliográficos
Autor(a) principal: Jum’h, Inshad
Data de Publicação: 2023
Outros Autores: Abu-Safe, Husam H., Ware, Morgan E., Qattan, I. A., Telfah, Ahmad, Tavares, C. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/86837
Resumo: Surface atomic arrangement and physical properties of aluminum ultrathin layers on c-Si(111)-7 × 7 and hydrogen-terminated c-Si(111)-1 × 1 surfaces deposited using molecular beam epitaxy were investigated. X-ray photoelectron spectroscopy spectra were collected in two configurations (take-off angle of 0° and 45°) to precisely determine the surface species. Moreover, 3D atomic force microscopy (AFM) images of the air-exposed samples were acquired to investigate the clustering formations in film structure. The deposition of the Al layers was monitored in situ using a reflection high-energy electron diffraction (RHEED) experiments to confirm the surface crystalline structure of the c-Si(111). The analysis of the RHEED patterns during the growth process suggests the settlement of aluminum atoms in Al(111)-1 × 1 clustered formations on both types of surfaces. The surface electrical conductivity in both configurations was tested against atmospheric oxidation. The results indicate differences in conductivity based on the formation of various alloys on the surface.
id RCAP_bc62a2e95069228f2a074810aba1f125
oai_identifier_str oai:repositorium.sdum.uminho.pt:1822/86837
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)C-Si(111)AluminumMBESurface structureAtmospheric oxidationEllipsometryScience & TechnologySurface atomic arrangement and physical properties of aluminum ultrathin layers on c-Si(111)-7 × 7 and hydrogen-terminated c-Si(111)-1 × 1 surfaces deposited using molecular beam epitaxy were investigated. X-ray photoelectron spectroscopy spectra were collected in two configurations (take-off angle of 0° and 45°) to precisely determine the surface species. Moreover, 3D atomic force microscopy (AFM) images of the air-exposed samples were acquired to investigate the clustering formations in film structure. The deposition of the Al layers was monitored in situ using a reflection high-energy electron diffraction (RHEED) experiments to confirm the surface crystalline structure of the c-Si(111). The analysis of the RHEED patterns during the growth process suggests the settlement of aluminum atoms in Al(111)-1 × 1 clustered formations on both types of surfaces. The surface electrical conductivity in both configurations was tested against atmospheric oxidation. The results indicate differences in conductivity based on the formation of various alloys on the surface.This research was partially funded by the German Jordanian University in Jordan through seed grant (SBSH 02/2021).Multidisciplinary Digital Publishing Institute (MDPI)Universidade do MinhoJum’h, InshadAbu-Safe, Husam H.Ware, Morgan E.Qattan, I. A.Telfah, AhmadTavares, C. J.2023-03-082023-03-08T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/86837engJum’h, I.; Abu-Safe, H.H.; Ware, M.E.; Qattan, I.A.; Telfah, A.; Tavares, C.J. Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111). Nanomaterials 2023, 13, 970.2079-499110.3390/nano13060970970https://www.mdpi.com/2079-4991/13/6/970info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-10-14T01:21:38Zoai:repositorium.sdum.uminho.pt:1822/86837Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:35:28.969856Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
title Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
spellingShingle Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
Jum’h, Inshad
C-Si(111)
Aluminum
MBE
Surface structure
Atmospheric oxidation
Ellipsometry
Science & Technology
title_short Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
title_full Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
title_fullStr Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
title_full_unstemmed Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
title_sort Surface atomic arrangement of aluminum ultra-thin layers grown on Si(111)
author Jum’h, Inshad
author_facet Jum’h, Inshad
Abu-Safe, Husam H.
Ware, Morgan E.
Qattan, I. A.
Telfah, Ahmad
Tavares, C. J.
author_role author
author2 Abu-Safe, Husam H.
Ware, Morgan E.
Qattan, I. A.
Telfah, Ahmad
Tavares, C. J.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Jum’h, Inshad
Abu-Safe, Husam H.
Ware, Morgan E.
Qattan, I. A.
Telfah, Ahmad
Tavares, C. J.
dc.subject.por.fl_str_mv C-Si(111)
Aluminum
MBE
Surface structure
Atmospheric oxidation
Ellipsometry
Science & Technology
topic C-Si(111)
Aluminum
MBE
Surface structure
Atmospheric oxidation
Ellipsometry
Science & Technology
description Surface atomic arrangement and physical properties of aluminum ultrathin layers on c-Si(111)-7 × 7 and hydrogen-terminated c-Si(111)-1 × 1 surfaces deposited using molecular beam epitaxy were investigated. X-ray photoelectron spectroscopy spectra were collected in two configurations (take-off angle of 0° and 45°) to precisely determine the surface species. Moreover, 3D atomic force microscopy (AFM) images of the air-exposed samples were acquired to investigate the clustering formations in film structure. The deposition of the Al layers was monitored in situ using a reflection high-energy electron diffraction (RHEED) experiments to confirm the surface crystalline structure of the c-Si(111). The analysis of the RHEED patterns during the growth process suggests the settlement of aluminum atoms in Al(111)-1 × 1 clustered formations on both types of surfaces. The surface electrical conductivity in both configurations was tested against atmospheric oxidation. The results indicate differences in conductivity based on the formation of various alloys on the surface.
publishDate 2023
dc.date.none.fl_str_mv 2023-03-08
2023-03-08T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/86837
url https://hdl.handle.net/1822/86837
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Jum’h, I.; Abu-Safe, H.H.; Ware, M.E.; Qattan, I.A.; Telfah, A.; Tavares, C.J. Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111). Nanomaterials 2023, 13, 970.
2079-4991
10.3390/nano13060970
970
https://www.mdpi.com/2079-4991/13/6/970
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799133618239438848

Registros relacionados