The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | por |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/10216/140891 |
Resumo: | Transparent undoped ZnO and additionally doped with Ga and Bi thin films were produced by magnetron sputtering. The thin films were comprehensively characterized by X-ray absorption, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission and scanning transmission electron (TEM, STEM) microscopy and Raman spectroscopy. All undoped and doped films crystallise in a ZnO phase with the hexagonal wurtzite crystal structure. The local structure of the thin films was investigated by temperature-dependent X-ray absorption spectroscopy at the Zn and Ga K-edges, as well as at the Bi L3-edge. It was found that the doping of Ga3+ and Bi3+ ions in the ZnO wurtzite structure produces distinct effects on the thin film microstructure. The substitution of Zn2+ ions by smaller Ga3+ ions introduces a static disorder to the thin film structure, which is evidenced by an increase in the mean-square relative displacements σ2(Zn‒O) and σ2(Zn‒Zn). At the same time, large Bi3+ ions do not substitute zinc ions, but are likely located in the disordered environment at the ZnO grain boundaries. This conclusion was directly supported by energy-dispersive X-ray spectroscopy combined with TEM and STEM observations as well as by resonant and non-resonant μ-Raman experiments at room temperature, where the ZnO and ZnO:Bi spectra are similar, suggesting a lack of structural disorder in the wurtzite cell. On the other hand, the Raman disorder-activated phonon is pronounced for Ga-doping of the ZnO lattice, confirming the compositional disorder. Both XRD and XPS ruled out Ga2O3 phase in Ga-doped ZnO; conversely, Bi2O3 and a small amount of Bi‒metal phases are clearly discerned by XPS experiments, further suggesting that Bi is not incorporated in the ZnO wurtzite cell, but segregated to grain boundaries. |
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The role of Ga and Bi doping on the local structure of transparent zinc oxide thin filmsQuímica, Engenharia químicaChemistry, Chemical engineeringTransparent undoped ZnO and additionally doped with Ga and Bi thin films were produced by magnetron sputtering. The thin films were comprehensively characterized by X-ray absorption, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission and scanning transmission electron (TEM, STEM) microscopy and Raman spectroscopy. All undoped and doped films crystallise in a ZnO phase with the hexagonal wurtzite crystal structure. The local structure of the thin films was investigated by temperature-dependent X-ray absorption spectroscopy at the Zn and Ga K-edges, as well as at the Bi L3-edge. It was found that the doping of Ga3+ and Bi3+ ions in the ZnO wurtzite structure produces distinct effects on the thin film microstructure. The substitution of Zn2+ ions by smaller Ga3+ ions introduces a static disorder to the thin film structure, which is evidenced by an increase in the mean-square relative displacements σ2(Zn‒O) and σ2(Zn‒Zn). At the same time, large Bi3+ ions do not substitute zinc ions, but are likely located in the disordered environment at the ZnO grain boundaries. This conclusion was directly supported by energy-dispersive X-ray spectroscopy combined with TEM and STEM observations as well as by resonant and non-resonant μ-Raman experiments at room temperature, where the ZnO and ZnO:Bi spectra are similar, suggesting a lack of structural disorder in the wurtzite cell. On the other hand, the Raman disorder-activated phonon is pronounced for Ga-doping of the ZnO lattice, confirming the compositional disorder. Both XRD and XPS ruled out Ga2O3 phase in Ga-doped ZnO; conversely, Bi2O3 and a small amount of Bi‒metal phases are clearly discerned by XPS experiments, further suggesting that Bi is not incorporated in the ZnO wurtzite cell, but segregated to grain boundaries.2021-07-252021-07-25T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/10216/140891por0925-838810.1016/j.jallcom.2021.159489Filipe CorreiaJoana RibeiroAlexei KuzminInga PudzaAleksandr KalinkoEdmund WelterAdélio MendesJoana RodriguesNabiha SedrineTeresa MonteiroMaria CorreiaCarlos Tavaresinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-11-29T15:11:11Zoai:repositorio-aberto.up.pt:10216/140891Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T00:17:39.224666Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
title |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
spellingShingle |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films Filipe Correia Química, Engenharia química Chemistry, Chemical engineering |
title_short |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
title_full |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
title_fullStr |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
title_full_unstemmed |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
title_sort |
The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films |
author |
Filipe Correia |
author_facet |
Filipe Correia Joana Ribeiro Alexei Kuzmin Inga Pudza Aleksandr Kalinko Edmund Welter Adélio Mendes Joana Rodrigues Nabiha Sedrine Teresa Monteiro Maria Correia Carlos Tavares |
author_role |
author |
author2 |
Joana Ribeiro Alexei Kuzmin Inga Pudza Aleksandr Kalinko Edmund Welter Adélio Mendes Joana Rodrigues Nabiha Sedrine Teresa Monteiro Maria Correia Carlos Tavares |
author2_role |
author author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Filipe Correia Joana Ribeiro Alexei Kuzmin Inga Pudza Aleksandr Kalinko Edmund Welter Adélio Mendes Joana Rodrigues Nabiha Sedrine Teresa Monteiro Maria Correia Carlos Tavares |
dc.subject.por.fl_str_mv |
Química, Engenharia química Chemistry, Chemical engineering |
topic |
Química, Engenharia química Chemistry, Chemical engineering |
description |
Transparent undoped ZnO and additionally doped with Ga and Bi thin films were produced by magnetron sputtering. The thin films were comprehensively characterized by X-ray absorption, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission and scanning transmission electron (TEM, STEM) microscopy and Raman spectroscopy. All undoped and doped films crystallise in a ZnO phase with the hexagonal wurtzite crystal structure. The local structure of the thin films was investigated by temperature-dependent X-ray absorption spectroscopy at the Zn and Ga K-edges, as well as at the Bi L3-edge. It was found that the doping of Ga3+ and Bi3+ ions in the ZnO wurtzite structure produces distinct effects on the thin film microstructure. The substitution of Zn2+ ions by smaller Ga3+ ions introduces a static disorder to the thin film structure, which is evidenced by an increase in the mean-square relative displacements σ2(Zn‒O) and σ2(Zn‒Zn). At the same time, large Bi3+ ions do not substitute zinc ions, but are likely located in the disordered environment at the ZnO grain boundaries. This conclusion was directly supported by energy-dispersive X-ray spectroscopy combined with TEM and STEM observations as well as by resonant and non-resonant μ-Raman experiments at room temperature, where the ZnO and ZnO:Bi spectra are similar, suggesting a lack of structural disorder in the wurtzite cell. On the other hand, the Raman disorder-activated phonon is pronounced for Ga-doping of the ZnO lattice, confirming the compositional disorder. Both XRD and XPS ruled out Ga2O3 phase in Ga-doped ZnO; conversely, Bi2O3 and a small amount of Bi‒metal phases are clearly discerned by XPS experiments, further suggesting that Bi is not incorporated in the ZnO wurtzite cell, but segregated to grain boundaries. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-07-25 2021-07-25T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/10216/140891 |
url |
https://hdl.handle.net/10216/140891 |
dc.language.iso.fl_str_mv |
por |
language |
por |
dc.relation.none.fl_str_mv |
0925-8388 10.1016/j.jallcom.2021.159489 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
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reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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