Optical and structural analysis of solar selective absorbing coatings based on AlSiOx:W cermets

• Autor(a) principal: Dias, D.
• Data de Publicação: 2017
• Outros Autores: Rebouta, L., Costa, P., Al-Rjoub, A., Benelmeki, M., Tavares, C. J., Barradas, N. P., Alves, E., Santilli, P., Pischow, K.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/47284
• topic: Solar selective absorber; AlSiOx:W cermet; Optical constants; Dielectric function modelling; Sputtering, solar thermal; AlSiO :W cermet x; Science & Technology

It is reported in this work the development and study of the optical and structural properties of a solar selective absorber cermet based on AlSiOx:W. A four-layer composite film structure, W/AlSiOx:W(HA)/AlSiOx:W(LA)/AlSiOx, was deposited on stainless steel substrates using the magnetron sputtering deposition method. Numerical calculations were performed to simulate the spectral properties of multilayer stacks with varying metal volume fraction cermets and film thickness. The chemical analysis was performed using X-ray photoelectron spectroscopy and the results show that in the high metal volume fraction cermet layer, AlSiOx:W(HA), about one third of W atoms are in the W-O oxidation state, another third in the Wx+ oxidation state and the last third in the W4+, W5+ and W6+ oxidation states. The X-ray diffractograms of AlSiOx:W layers show a broad peak indicating that both, W and AlSiOx, are amorphous. These results indicate that this film structure has a good spectral selective property that is suitable for solar thermal applications, with the coatings exhibiting a solar absorptance of 94-95.5% and emissivities of 8-9% (at 100 degrees C) and 10-14% (at 400 degrees C). The samples were subjected to a thermal annealing at 450 degrees C, in air, and 580 degrees C, in vacuum and showed very good oxidation resistance and thermal stability. Morphological characterizations were carried out using scanning electron microscopy and atomic force microscopy. Rutherford Backscattering experiments were also performed to analyze the tungsten depth profile.