Muon and hydrogen states in II-VI semiconductor compounds. A muSR study

• Autor(a) principal: Weidinger, A.
• Data de Publicação: 2003
• Outros Autores: Alberto, H. V., Gil, J. M., Vilão, R. C., Duarte, J. Piroto, Campos, N. Ayres de
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• DOI: 10.1002/pssc.200300000
• Texto Completo: http://hdl.handle.net/10316/8204; https://doi.org/10.1002/pssc.200300000

Additional hydrogen in II-VI semiconductors may occur in two different configurations, either bound to the anion in a position along the bond direction, or at an open interstitial site surrounded by four cations. The electronic character of these states is very different: the bound hydrogen forms a donor with an extended electronic wave function, whereas the interstitial hydrogen is acceptor-like and has an almost free-atom-like electron distribution. In this paper, we show in which systems the donor and in which the acceptor was found to form the ground state. Some of the structural and electronic properties of these states are also given. The information presented is derived from muSR experiments.