Emergent solution based IGZO memristor towards neuromorphic applications

Detalhes bibliográficos
Autor(a) principal: Martins, Raquel Azevedo
Data de Publicação: 2022
Outros Autores: Carlos, Emanuel, Deuermeier, Jonas, Pereira, Maria Elias, Martins, Rodrigo, Fortunato, Elvira, Kiazadeh, Asal
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/135533
Resumo: Publisher Copyright: © The Royal Society of Chemistry.
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spelling Emergent solution based IGZO memristor towards neuromorphic applicationsChemistry(all)Materials ChemistryPublisher Copyright: © The Royal Society of Chemistry.Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems. This journal isDCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)RUNMartins, Raquel AzevedoCarlos, EmanuelDeuermeier, JonasPereira, Maria EliasMartins, RodrigoFortunato, ElviraKiazadeh, Asal2022-07-17T00:31:28Z2022-02-142022-02-14T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfapplication/pdfhttp://hdl.handle.net/10362/135533eng2050-7534PURE: 42245785https://doi.org/10.1039/d1tc05465ainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:13:51Zoai:run.unl.pt:10362/135533Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:48:26.051394Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Emergent solution based IGZO memristor towards neuromorphic applications
title Emergent solution based IGZO memristor towards neuromorphic applications
spellingShingle Emergent solution based IGZO memristor towards neuromorphic applications
Martins, Raquel Azevedo
Chemistry(all)
Materials Chemistry
title_short Emergent solution based IGZO memristor towards neuromorphic applications
title_full Emergent solution based IGZO memristor towards neuromorphic applications
title_fullStr Emergent solution based IGZO memristor towards neuromorphic applications
title_full_unstemmed Emergent solution based IGZO memristor towards neuromorphic applications
title_sort Emergent solution based IGZO memristor towards neuromorphic applications
author Martins, Raquel Azevedo
author_facet Martins, Raquel Azevedo
Carlos, Emanuel
Deuermeier, Jonas
Pereira, Maria Elias
Martins, Rodrigo
Fortunato, Elvira
Kiazadeh, Asal
author_role author
author2 Carlos, Emanuel
Deuermeier, Jonas
Pereira, Maria Elias
Martins, Rodrigo
Fortunato, Elvira
Kiazadeh, Asal
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
RUN
dc.contributor.author.fl_str_mv Martins, Raquel Azevedo
Carlos, Emanuel
Deuermeier, Jonas
Pereira, Maria Elias
Martins, Rodrigo
Fortunato, Elvira
Kiazadeh, Asal
dc.subject.por.fl_str_mv Chemistry(all)
Materials Chemistry
topic Chemistry(all)
Materials Chemistry
description Publisher Copyright: © The Royal Society of Chemistry.
publishDate 2022
dc.date.none.fl_str_mv 2022-07-17T00:31:28Z
2022-02-14
2022-02-14T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/135533
url http://hdl.handle.net/10362/135533
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2050-7534
PURE: 42245785
https://doi.org/10.1039/d1tc05465a
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 8
application/pdf
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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