Structural and optical properties of Er implanted AlN thin films: green and infrared photoluminescence at room temperature

• Autor(a) principal: Soares, M.J.
• Data de Publicação: 2011
• Outros Autores: Leitão, J.P., Silva, M.I.N. da, González, J.C., Matinaga, F.M., Lorenz, K., Alves, E., Peres, M., Monteiro, T.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10773/6623
• topic: AlN; Er3+ photoluminescence; Raman; RBS

In this work erbium ions were implanted into AlN films grown on sapphire with fluence range: (0.5-2) × 1015 at/cm-2, ion energy range: 150-350 keV and tilt angle: 0°, 10°, 20°, 30°. The optical and structural properties of the films are studied by means of photoluminescence and Raman spectroscopy in combination with Rutherford backscattering/channeling (RBS/C) measurements. The photoluminescence spectra of the Er3+ were recorded in the visible and infrared region between 9 and 300 K after thermal annealing treatments of the samples. The emission spectrum of the AlN:Er films consists of two series of green lines centered at 538 and 558 nm with typical Er3+ emission in the infrared at 1.54 μm. The green lines have been identified as Er3+ transitions from the 2H11/2 and 4S3/2 levels to the 4I15/2 ground state. Different erbium centers in the matrix are suggested by the change of infrared photoluminescence relative intensity of some of the emission lines when different excitation wavelengths are used. The relative abundances of these centers can be varied by using different implantation parameters. The Raman and RBS/C measurements show good crystalline quality for all the studied films.