Disentangling the role of the SnO layer on the pyro-phototronic effect in ZnO-based self-powered photodetectors

• Autor(a) principal: Vieira, E. M. F
• Data de Publicação: 2023
• Outros Autores: Silva, José Pedro Basto, Gwozdz, Katarzyna, Kaim, Adrian, Gomes, Nuno M., Chahboun, Adil, Gomes, M. J. M., Correia, José H.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: https://hdl.handle.net/1822/87436
• topic: n-p-n heterojunction; pyro-phototronic effect; self-powered photodetectors; ultrafast photosensors; Ciências Naturais::Ciências Físicas; Science & Technology

Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%. By analyzing energy diagrams of the p-n junction, the underlying physical mechanism of the self-powered violet PDs is carefully illustrated. A high photo-responsivity (R) of 93 mA W-1 accompanied by a detectivity (D*) of 3.1 x 10(10) Jones are observed under self-driven conditions, when the device is exposed to 405 nm excitation laser wavelength, with a laser power density of 36 mW cm(-2) and at a chopper frequency of 400 Hz. The Si/SnO/ZnO/ITO device shows an enhancement of 3067% in responsivity when compared to the Al/Si/ZnO/ITO. The photodetector holds an ultra-fast response of approximate to 2 mu s, which is among the best self-powered photodetectors reported in the literature based on ZnO.