PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Detalhes bibliográficos
Autor(a) principal: Fernandes, Miguel
Data de Publicação: 2015
Outros Autores: Vygranenko, Yuri, Vieira, Manuela
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.21/5748
Resumo: Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.
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spelling PINPIN a-Si: H based structures for X-ray image detection using the laser scanning techniqueX-ray sensorLaser scanned photodiodeImage sensorAmorphous siliconConventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.Elsevier Science BVRCIPLFernandes, MiguelVygranenko, YuriVieira, Manuela2016-02-25T16:50:52Z2015-05-012015-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.21/5748engFERNANDES, Miguel; VYGRANENKO, Yuri; VIEIRA, Manuela - PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique. Applied Surface Science. ISSN. 0169-4332. Vol. 336 (2015), pp. 222-2250169-433210.1016/j.apsusc.2014.11.085metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-08-03T09:49:36Zoai:repositorio.ipl.pt:10400.21/5748Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:14:59.364346Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
title PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
spellingShingle PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
Fernandes, Miguel
X-ray sensor
Laser scanned photodiode
Image sensor
Amorphous silicon
title_short PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
title_full PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
title_fullStr PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
title_full_unstemmed PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
title_sort PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique
author Fernandes, Miguel
author_facet Fernandes, Miguel
Vygranenko, Yuri
Vieira, Manuela
author_role author
author2 Vygranenko, Yuri
Vieira, Manuela
author2_role author
author
dc.contributor.none.fl_str_mv RCIPL
dc.contributor.author.fl_str_mv Fernandes, Miguel
Vygranenko, Yuri
Vieira, Manuela
dc.subject.por.fl_str_mv X-ray sensor
Laser scanned photodiode
Image sensor
Amorphous silicon
topic X-ray sensor
Laser scanned photodiode
Image sensor
Amorphous silicon
description Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.
publishDate 2015
dc.date.none.fl_str_mv 2015-05-01
2015-05-01T00:00:00Z
2016-02-25T16:50:52Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.21/5748
url http://hdl.handle.net/10400.21/5748
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv FERNANDES, Miguel; VYGRANENKO, Yuri; VIEIRA, Manuela - PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique. Applied Surface Science. ISSN. 0169-4332. Vol. 336 (2015), pp. 222-225
0169-4332
10.1016/j.apsusc.2014.11.085
dc.rights.driver.fl_str_mv metadata only access
info:eu-repo/semantics/openAccess
rights_invalid_str_mv metadata only access
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science BV
publisher.none.fl_str_mv Elsevier Science BV
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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