Low-temperature dielectric response of NaTaO3 ceramics and films

Detalhes bibliográficos
Autor(a) principal: Yonny Romaguera
Data de Publicação: 2012
Outros Autores: Joaquim A. Moreira, Javier Cruz, Paula M. Vilarinho, Alexandr Tkach, Abilio Almeida
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://repositorio.inesctec.pt/handle/123456789/2351
Resumo: In this work, NaTiO3 ceramics are prepared by conventional mixed oxide method and NaTiO3 films are deposited by rf magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTiO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1kHz and 1MHz, the dielectric permittivity of NaTiO3 ceramics is frequency independent and increases on cooling up to ~324, which is to the best of our knowledge, the highest value ever reported for NaTaO3 ceramics. In contrast, NaTiO3 films exhibit a dielectric relaxation between ~20 and 30K, following the Arrhenius law with activation energy ~51meV and pre-exponential term ~10-15s. Dissimilarities in the dielectric response of NaTiO3 ceramics and films are explained by the influence of oxygen vacancies.
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spelling Low-temperature dielectric response of NaTaO3 ceramics and filmsIn this work, NaTiO3 ceramics are prepared by conventional mixed oxide method and NaTiO3 films are deposited by rf magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTiO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1kHz and 1MHz, the dielectric permittivity of NaTiO3 ceramics is frequency independent and increases on cooling up to ~324, which is to the best of our knowledge, the highest value ever reported for NaTaO3 ceramics. In contrast, NaTiO3 films exhibit a dielectric relaxation between ~20 and 30K, following the Arrhenius law with activation energy ~51meV and pre-exponential term ~10-15s. Dissimilarities in the dielectric response of NaTiO3 ceramics and films are explained by the influence of oxygen vacancies.2017-11-16T13:33:08Z2012-01-01T00:00:00Z2012info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://repositorio.inesctec.pt/handle/123456789/2351engYonny RomagueraJoaquim A. MoreiraJavier CruzPaula M. VilarinhoAlexandr TkachAbilio Almeidainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-10-12T02:21:45Zoai:repositorio.inesctec.pt:123456789/2351Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-10-12T02:21:45Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Low-temperature dielectric response of NaTaO3 ceramics and films
title Low-temperature dielectric response of NaTaO3 ceramics and films
spellingShingle Low-temperature dielectric response of NaTaO3 ceramics and films
Yonny Romaguera
title_short Low-temperature dielectric response of NaTaO3 ceramics and films
title_full Low-temperature dielectric response of NaTaO3 ceramics and films
title_fullStr Low-temperature dielectric response of NaTaO3 ceramics and films
title_full_unstemmed Low-temperature dielectric response of NaTaO3 ceramics and films
title_sort Low-temperature dielectric response of NaTaO3 ceramics and films
author Yonny Romaguera
author_facet Yonny Romaguera
Joaquim A. Moreira
Javier Cruz
Paula M. Vilarinho
Alexandr Tkach
Abilio Almeida
author_role author
author2 Joaquim A. Moreira
Javier Cruz
Paula M. Vilarinho
Alexandr Tkach
Abilio Almeida
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Yonny Romaguera
Joaquim A. Moreira
Javier Cruz
Paula M. Vilarinho
Alexandr Tkach
Abilio Almeida
description In this work, NaTiO3 ceramics are prepared by conventional mixed oxide method and NaTiO3 films are deposited by rf magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTiO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1kHz and 1MHz, the dielectric permittivity of NaTiO3 ceramics is frequency independent and increases on cooling up to ~324, which is to the best of our knowledge, the highest value ever reported for NaTaO3 ceramics. In contrast, NaTiO3 films exhibit a dielectric relaxation between ~20 and 30K, following the Arrhenius law with activation energy ~51meV and pre-exponential term ~10-15s. Dissimilarities in the dielectric response of NaTiO3 ceramics and films are explained by the influence of oxygen vacancies.
publishDate 2012
dc.date.none.fl_str_mv 2012-01-01T00:00:00Z
2012
2017-11-16T13:33:08Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://repositorio.inesctec.pt/handle/123456789/2351
url http://repositorio.inesctec.pt/handle/123456789/2351
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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