Oxide muonics: A new compendium

• Autor(a) principal: Cox, S. F. J.
• Data de Publicação: 2006
• Outros Autores: Lord, J. S., Cottrell, S. P., Gil, J. M., Alberto, H. V., Piroto Duarte, J., Vilão, R. C., Keeble, D. J., Davis, E. A., Keren, A., Scheuermann, R., Stoykov, A., Charlton, M., van der Werf, D. P., Gavartin, J.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10316/4408; https://doi.org/10.1016/j.physb.2005.11.106
• topic: Muonium; Hydrogen doping

A new survey of muonium states brings the total of binary non-magnetic oxides studied to 30, with normal muonium--the interstitially trapped atomic state--found in 15 of these. The number of shallow-donor states of the type known in ZnO now also totals 15, but there are hints of several others. Tantalizingly, the shallow-donor and deep-atomic states are found to coexist in several of the candidate high-permittivity dielectrics. Highly anisotropic states, resembling anomalous muonium in semiconductors and including examples of muonium trapped at oxygen vacancies, complete a spectrum of hyperfine parameters covering five powers of ten. Effective ionization temperatures range from 10 K for shallow to over 1000 K for deep states, with corresponding activation energies between several meV and several eV. The oxide band gap emerges as a parameter controlling the systematics of the deep-to-shallow transition for muonium and, by inference, monatomic hydrogen.