Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/25055 |
Resumo: | Transparent microelectronics applications have been receiving a great amount of research because of the continuous demand for better products from the consumers due to their use in almost every product of the modern-day society. This work comes to explore two of the missing building blocks in completely transparent microelectronics, a capable transparent conductive oxide (TCO) that can substitute indium-tin-oxide (ITO) and a good transparent p-type TCO. The materials studied were ZnO and CuCrO2 that were tuned for a wide range of carrier concentration though changes in deposition parameters and annealing steps. ZnO thin films have shown a wide range of carrier concentration from 8∗1019 approaching 1018 −3 and even values above 1020 −3, in the case of Aluminium doped ZnO films. An important relationship was discovered during this work, a direct interplay of the mobility with the carrier concentration, ∝, that holds in the range between 1018− 3∗1019−3. CuCrO2 thin films have shown also a wide range of tunability in terms of carrier concentration from 2∗1021 to 1017 −3, showing a progressive increase of optical transmittance from 37% to 60% with the decrease in carrier concentration, which makes them more suitable for transparent electronics applications. A P-N junction was proposed with these materials with a projected type-II band alignment and optimized carrier concentration of about 5∗1018 −3 on both sides of the junction. The junction was patterned by etching and photolithography but unfortunately the carrier concentration was not the optimized one, that lead into a ohmic contact. |
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Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applicationsZnOCuCrO2Annealing stepsCarrier ConcentrationTransparent P-N JunctionsDomínio/Área Científica::Engenharia e Tecnologia::Engenharia dos MateriaisTransparent microelectronics applications have been receiving a great amount of research because of the continuous demand for better products from the consumers due to their use in almost every product of the modern-day society. This work comes to explore two of the missing building blocks in completely transparent microelectronics, a capable transparent conductive oxide (TCO) that can substitute indium-tin-oxide (ITO) and a good transparent p-type TCO. The materials studied were ZnO and CuCrO2 that were tuned for a wide range of carrier concentration though changes in deposition parameters and annealing steps. ZnO thin films have shown a wide range of carrier concentration from 8∗1019 approaching 1018 −3 and even values above 1020 −3, in the case of Aluminium doped ZnO films. An important relationship was discovered during this work, a direct interplay of the mobility with the carrier concentration, ∝, that holds in the range between 1018− 3∗1019−3. CuCrO2 thin films have shown also a wide range of tunability in terms of carrier concentration from 2∗1021 to 1017 −3, showing a progressive increase of optical transmittance from 37% to 60% with the decrease in carrier concentration, which makes them more suitable for transparent electronics applications. A P-N junction was proposed with these materials with a projected type-II band alignment and optimized carrier concentration of about 5∗1018 −3 on both sides of the junction. The junction was patterned by etching and photolithography but unfortunately the carrier concentration was not the optimized one, that lead into a ohmic contact.Fortunato, ElviraLeturcq, RenaudRUNAfonso, João Ricardo Antunes2018-10-01T00:30:22Z2017-092017-112017-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/25055TID:202315924enginfo:eu-repo/semantics/embargoedAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:13:02Zoai:run.unl.pt:10362/25055Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:28:10.308326Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
title |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
spellingShingle |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications Afonso, João Ricardo Antunes ZnO CuCrO2 Annealing steps Carrier Concentration Transparent P-N Junctions Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
title_short |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
title_full |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
title_fullStr |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
title_full_unstemmed |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
title_sort |
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications |
author |
Afonso, João Ricardo Antunes |
author_facet |
Afonso, João Ricardo Antunes |
author_role |
author |
dc.contributor.none.fl_str_mv |
Fortunato, Elvira Leturcq, Renaud RUN |
dc.contributor.author.fl_str_mv |
Afonso, João Ricardo Antunes |
dc.subject.por.fl_str_mv |
ZnO CuCrO2 Annealing steps Carrier Concentration Transparent P-N Junctions Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
topic |
ZnO CuCrO2 Annealing steps Carrier Concentration Transparent P-N Junctions Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
description |
Transparent microelectronics applications have been receiving a great amount of research because of the continuous demand for better products from the consumers due to their use in almost every product of the modern-day society. This work comes to explore two of the missing building blocks in completely transparent microelectronics, a capable transparent conductive oxide (TCO) that can substitute indium-tin-oxide (ITO) and a good transparent p-type TCO. The materials studied were ZnO and CuCrO2 that were tuned for a wide range of carrier concentration though changes in deposition parameters and annealing steps. ZnO thin films have shown a wide range of carrier concentration from 8∗1019 approaching 1018 −3 and even values above 1020 −3, in the case of Aluminium doped ZnO films. An important relationship was discovered during this work, a direct interplay of the mobility with the carrier concentration, ∝, that holds in the range between 1018− 3∗1019−3. CuCrO2 thin films have shown also a wide range of tunability in terms of carrier concentration from 2∗1021 to 1017 −3, showing a progressive increase of optical transmittance from 37% to 60% with the decrease in carrier concentration, which makes them more suitable for transparent electronics applications. A P-N junction was proposed with these materials with a projected type-II band alignment and optimized carrier concentration of about 5∗1018 −3 on both sides of the junction. The junction was patterned by etching and photolithography but unfortunately the carrier concentration was not the optimized one, that lead into a ohmic contact. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-09 2017-11 2017-09-01T00:00:00Z 2018-10-01T00:30:22Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/25055 TID:202315924 |
url |
http://hdl.handle.net/10362/25055 |
identifier_str_mv |
TID:202315924 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/embargoedAccess |
eu_rights_str_mv |
embargoedAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137908035158016 |