Effects of tin on the performance of ZnO photoanode for DSSC
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Matéria (Rio de Janeiro. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762021000400351 |
Resumo: | ABSTRACT Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density. |
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Effects of tin on the performance of ZnO photoanode for DSSCZinc oxidetinsolar cellABSTRACT Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density.Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiroem cooperação com a Associação Brasileira do Hidrogênio, ABH22021-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762021000400351Matéria (Rio de Janeiro) v.26 n.4 2021reponame:Matéria (Rio de Janeiro. Online)instname:Matéria (Rio de Janeiro. Online)instacron:RLAM10.1590/s1517-707620210004.1312info:eu-repo/semantics/openAccessNunes,Vanja FonteneleLima,Francisco MarconeTeixeira,Edwalder SilvaMaia Júnior,Paulo Herbert FrançaAlmeida,Ana Fabíola LeiteFreire,Francisco Nivaldo Aguiareng2021-12-20T00:00:00Zoai:scielo:S1517-70762021000400351Revistahttp://www.materia.coppe.ufrj.br/https://old.scielo.br/oai/scielo-oai.php||materia@labh2.coppe.ufrj.br1517-70761517-7076opendoar:2021-12-20T00:00Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)false |
dc.title.none.fl_str_mv |
Effects of tin on the performance of ZnO photoanode for DSSC |
title |
Effects of tin on the performance of ZnO photoanode for DSSC |
spellingShingle |
Effects of tin on the performance of ZnO photoanode for DSSC Nunes,Vanja Fontenele Zinc oxide tin solar cell |
title_short |
Effects of tin on the performance of ZnO photoanode for DSSC |
title_full |
Effects of tin on the performance of ZnO photoanode for DSSC |
title_fullStr |
Effects of tin on the performance of ZnO photoanode for DSSC |
title_full_unstemmed |
Effects of tin on the performance of ZnO photoanode for DSSC |
title_sort |
Effects of tin on the performance of ZnO photoanode for DSSC |
author |
Nunes,Vanja Fontenele |
author_facet |
Nunes,Vanja Fontenele Lima,Francisco Marcone Teixeira,Edwalder Silva Maia Júnior,Paulo Herbert França Almeida,Ana Fabíola Leite Freire,Francisco Nivaldo Aguiar |
author_role |
author |
author2 |
Lima,Francisco Marcone Teixeira,Edwalder Silva Maia Júnior,Paulo Herbert França Almeida,Ana Fabíola Leite Freire,Francisco Nivaldo Aguiar |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Nunes,Vanja Fontenele Lima,Francisco Marcone Teixeira,Edwalder Silva Maia Júnior,Paulo Herbert França Almeida,Ana Fabíola Leite Freire,Francisco Nivaldo Aguiar |
dc.subject.por.fl_str_mv |
Zinc oxide tin solar cell |
topic |
Zinc oxide tin solar cell |
description |
ABSTRACT Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762021000400351 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762021000400351 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/s1517-707620210004.1312 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
dc.source.none.fl_str_mv |
Matéria (Rio de Janeiro) v.26 n.4 2021 reponame:Matéria (Rio de Janeiro. Online) instname:Matéria (Rio de Janeiro. Online) instacron:RLAM |
instname_str |
Matéria (Rio de Janeiro. Online) |
instacron_str |
RLAM |
institution |
RLAM |
reponame_str |
Matéria (Rio de Janeiro. Online) |
collection |
Matéria (Rio de Janeiro. Online) |
repository.name.fl_str_mv |
Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online) |
repository.mail.fl_str_mv |
||materia@labh2.coppe.ufrj.br |
_version_ |
1752126694755401728 |