Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Matéria (Rio de Janeiro. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000100418 |
Resumo: | ABSTRACT In this article, hybrid white organic light-emitting diodes (WOLEDs) under p-i-n structures have been investigated in terms of power efficiency. By using tris(8-hydroxy quinolinato) aluminum (Alq3) doped with 8-hydroxy-quinolinato lithium (Liq) as an n-type and WHI112 doped with molybdenum trioxide (MoO3) as a p-type, the typical device structure of ITO/WHI112: 20 wt.% MoO3 (55 nm)/HTG-1 (10 nm)/UBH15: 3 wt.% EB502 (10 nm)/EPH31: 3 wt.% EPY01 (25nm)/3TPYMB (10 nm)/Alq3: 33 wt.% Liq (25 nm)/Al (150 nm) was fabricated. It has been found that the p-i-n device based device showed the lowest driving voltage and highest power efficiency among the undoped and n-type devices. At the current density of 20 mA/cm2, the roll-off of the efficiency in the p-i-n device was much smaller than the n-type and the undoped devices. The current and power efficiency of the p-i-n device were maintained with 17.2 cd/A and 5.1 lm/W at 100 mA/cm2, it was reduced to 7.5 % and 21 %, respectively. In contrast, the n-type device exhibited the significant reduction of efficiency (14.4 cd/A and 3.8 lm/W at 80 mA/cm2), it was reduced to 20 % and 39.6 %, respectively. The superior performances of the p-i-n structure based device were attributed to the high hole injection ability of WHI112:MoO3 and high electron mobility of Alq3:Liq, leading to high power efficiency and low driving voltage. A better balance of electrons and holes could contribute to a good current efficiency for the device. These findings strongly indicated that carrier injection ability and balance showed significant affects on the performance of OLED. |
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Improvement of power efficiency of hybrid white OLEDs based on p-i-n structuresHighly efficient OLEDshybrid white OLEDsp-i-n OLEDABSTRACT In this article, hybrid white organic light-emitting diodes (WOLEDs) under p-i-n structures have been investigated in terms of power efficiency. By using tris(8-hydroxy quinolinato) aluminum (Alq3) doped with 8-hydroxy-quinolinato lithium (Liq) as an n-type and WHI112 doped with molybdenum trioxide (MoO3) as a p-type, the typical device structure of ITO/WHI112: 20 wt.% MoO3 (55 nm)/HTG-1 (10 nm)/UBH15: 3 wt.% EB502 (10 nm)/EPH31: 3 wt.% EPY01 (25nm)/3TPYMB (10 nm)/Alq3: 33 wt.% Liq (25 nm)/Al (150 nm) was fabricated. It has been found that the p-i-n device based device showed the lowest driving voltage and highest power efficiency among the undoped and n-type devices. At the current density of 20 mA/cm2, the roll-off of the efficiency in the p-i-n device was much smaller than the n-type and the undoped devices. The current and power efficiency of the p-i-n device were maintained with 17.2 cd/A and 5.1 lm/W at 100 mA/cm2, it was reduced to 7.5 % and 21 %, respectively. In contrast, the n-type device exhibited the significant reduction of efficiency (14.4 cd/A and 3.8 lm/W at 80 mA/cm2), it was reduced to 20 % and 39.6 %, respectively. The superior performances of the p-i-n structure based device were attributed to the high hole injection ability of WHI112:MoO3 and high electron mobility of Alq3:Liq, leading to high power efficiency and low driving voltage. A better balance of electrons and holes could contribute to a good current efficiency for the device. These findings strongly indicated that carrier injection ability and balance showed significant affects on the performance of OLED.Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiroem cooperação com a Associação Brasileira do Hidrogênio, ABH22018-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000100418Matéria (Rio de Janeiro) v.23 n.1 2018reponame:Matéria (Rio de Janeiro. Online)instname:Matéria (Rio de Janeiro. Online)instacron:RLAM10.1590/s1517-707620170001.0299info:eu-repo/semantics/openAccessChittawanij,ApisitLocharoenrat,Kitsakorneng2018-03-02T00:00:00Zoai:scielo:S1517-70762018000100418Revistahttp://www.materia.coppe.ufrj.br/https://old.scielo.br/oai/scielo-oai.php||materia@labh2.coppe.ufrj.br1517-70761517-7076opendoar:2018-03-02T00:00Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)false |
dc.title.none.fl_str_mv |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
title |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
spellingShingle |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures Chittawanij,Apisit Highly efficient OLEDs hybrid white OLEDs p-i-n OLED |
title_short |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
title_full |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
title_fullStr |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
title_full_unstemmed |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
title_sort |
Improvement of power efficiency of hybrid white OLEDs based on p-i-n structures |
author |
Chittawanij,Apisit |
author_facet |
Chittawanij,Apisit Locharoenrat,Kitsakorn |
author_role |
author |
author2 |
Locharoenrat,Kitsakorn |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Chittawanij,Apisit Locharoenrat,Kitsakorn |
dc.subject.por.fl_str_mv |
Highly efficient OLEDs hybrid white OLEDs p-i-n OLED |
topic |
Highly efficient OLEDs hybrid white OLEDs p-i-n OLED |
description |
ABSTRACT In this article, hybrid white organic light-emitting diodes (WOLEDs) under p-i-n structures have been investigated in terms of power efficiency. By using tris(8-hydroxy quinolinato) aluminum (Alq3) doped with 8-hydroxy-quinolinato lithium (Liq) as an n-type and WHI112 doped with molybdenum trioxide (MoO3) as a p-type, the typical device structure of ITO/WHI112: 20 wt.% MoO3 (55 nm)/HTG-1 (10 nm)/UBH15: 3 wt.% EB502 (10 nm)/EPH31: 3 wt.% EPY01 (25nm)/3TPYMB (10 nm)/Alq3: 33 wt.% Liq (25 nm)/Al (150 nm) was fabricated. It has been found that the p-i-n device based device showed the lowest driving voltage and highest power efficiency among the undoped and n-type devices. At the current density of 20 mA/cm2, the roll-off of the efficiency in the p-i-n device was much smaller than the n-type and the undoped devices. The current and power efficiency of the p-i-n device were maintained with 17.2 cd/A and 5.1 lm/W at 100 mA/cm2, it was reduced to 7.5 % and 21 %, respectively. In contrast, the n-type device exhibited the significant reduction of efficiency (14.4 cd/A and 3.8 lm/W at 80 mA/cm2), it was reduced to 20 % and 39.6 %, respectively. The superior performances of the p-i-n structure based device were attributed to the high hole injection ability of WHI112:MoO3 and high electron mobility of Alq3:Liq, leading to high power efficiency and low driving voltage. A better balance of electrons and holes could contribute to a good current efficiency for the device. These findings strongly indicated that carrier injection ability and balance showed significant affects on the performance of OLED. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000100418 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000100418 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/s1517-707620170001.0299 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
dc.source.none.fl_str_mv |
Matéria (Rio de Janeiro) v.23 n.1 2018 reponame:Matéria (Rio de Janeiro. Online) instname:Matéria (Rio de Janeiro. Online) instacron:RLAM |
instname_str |
Matéria (Rio de Janeiro. Online) |
instacron_str |
RLAM |
institution |
RLAM |
reponame_str |
Matéria (Rio de Janeiro. Online) |
collection |
Matéria (Rio de Janeiro. Online) |
repository.name.fl_str_mv |
Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online) |
repository.mail.fl_str_mv |
||materia@labh2.coppe.ufrj.br |
_version_ |
1752126690241282048 |