High-temperature thin-catalytic gate devices for combustion emissions control

Detalhes bibliográficos
Autor(a) principal: Khan,Shabbir A.
Data de Publicação: 2004
Outros Autores: Vasconcelos,Elder A. de, Hasegawa,Y., Katsube,T.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400010
Resumo: 4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450ºC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations in the Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Device parameters were evaluated from linear conductance/current versus conductance plots, with improved accuracy. The linearity of these plots is an indication that the devices are not being affected by interfacial oxide layers or pinning of the Fermi level. 4H-SiC devices showed slightly superior stability and sensitivity for this application.
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spelling High-temperature thin-catalytic gate devices for combustion emissions control4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450ºC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations in the Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Device parameters were evaluated from linear conductance/current versus conductance plots, with improved accuracy. The linearity of these plots is an indication that the devices are not being affected by interfacial oxide layers or pinning of the Fermi level. 4H-SiC devices showed slightly superior stability and sensitivity for this application.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400010Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400010info:eu-repo/semantics/openAccessKhan,Shabbir A.Vasconcelos,Elder A. deHasegawa,Y.Katsube,T.eng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400010Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv High-temperature thin-catalytic gate devices for combustion emissions control
title High-temperature thin-catalytic gate devices for combustion emissions control
spellingShingle High-temperature thin-catalytic gate devices for combustion emissions control
Khan,Shabbir A.
title_short High-temperature thin-catalytic gate devices for combustion emissions control
title_full High-temperature thin-catalytic gate devices for combustion emissions control
title_fullStr High-temperature thin-catalytic gate devices for combustion emissions control
title_full_unstemmed High-temperature thin-catalytic gate devices for combustion emissions control
title_sort High-temperature thin-catalytic gate devices for combustion emissions control
author Khan,Shabbir A.
author_facet Khan,Shabbir A.
Vasconcelos,Elder A. de
Hasegawa,Y.
Katsube,T.
author_role author
author2 Vasconcelos,Elder A. de
Hasegawa,Y.
Katsube,T.
author2_role author
author
author
dc.contributor.author.fl_str_mv Khan,Shabbir A.
Vasconcelos,Elder A. de
Hasegawa,Y.
Katsube,T.
description 4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450ºC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations in the Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Device parameters were evaluated from linear conductance/current versus conductance plots, with improved accuracy. The linearity of these plots is an indication that the devices are not being affected by interfacial oxide layers or pinning of the Fermi level. 4H-SiC devices showed slightly superior stability and sensitivity for this application.
publishDate 2004
dc.date.none.fl_str_mv 2004-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400010
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400010
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332004000400010
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.34 n.2b 2004
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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