Environment of Er in a-Si:H: co-sputtering versus ion implantation
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 1999 |
| Outros Autores: | , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Brazilian Journal of Physics |
| Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 |
Resumo: | We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood. |
| id |
SBF-2_0a22680400c1e638fc85021354f6e805 |
|---|---|
| oai_identifier_str |
oai:scielo:S0103-97331999000400029 |
| network_acronym_str |
SBF-2 |
| network_name_str |
Brazilian Journal of Physics |
| repository_id_str |
|
| spelling |
Environment of Er in a-Si:H: co-sputtering versus ion implantationWe report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400029info:eu-repo/semantics/openAccessPiamonteze,CínthiaTessler,Leandro R.Alves,M. C. MartinsTolentino,H.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400029Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
| dc.title.none.fl_str_mv |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| title |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| spellingShingle |
Environment of Er in a-Si:H: co-sputtering versus ion implantation Piamonteze,Cínthia |
| title_short |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| title_full |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| title_fullStr |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| title_full_unstemmed |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| title_sort |
Environment of Er in a-Si:H: co-sputtering versus ion implantation |
| author |
Piamonteze,Cínthia |
| author_facet |
Piamonteze,Cínthia Tessler,Leandro R. Alves,M. C. Martins Tolentino,H. |
| author_role |
author |
| author2 |
Tessler,Leandro R. Alves,M. C. Martins Tolentino,H. |
| author2_role |
author author author |
| dc.contributor.author.fl_str_mv |
Piamonteze,Cínthia Tessler,Leandro R. Alves,M. C. Martins Tolentino,H. |
| description |
We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood. |
| publishDate |
1999 |
| dc.date.none.fl_str_mv |
1999-12-01 |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 |
| url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
10.1590/S0103-97331999000400029 |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
text/html |
| dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.29 n.4 1999 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
| instname_str |
Sociedade Brasileira de Física (SBF) |
| instacron_str |
SBF |
| institution |
SBF |
| reponame_str |
Brazilian Journal of Physics |
| collection |
Brazilian Journal of Physics |
| repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
| repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
| _version_ |
1754734858817503232 |