Influence of minority carrier transport in the optical properties of double barrier diodes
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300029 |
Resumo: | The aim of this work is to study the importance of minority carrier transport in double barrier diodes (DBD). We propose a theoretical model capable to describe the photoluminescence properties observed in GaAs-Al0.35Ga0.65As double barrier diodes with the increase of temperature. In this model, we considered that the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to the well. To study the influence of previous transport mechanisms, we solved the continuity equation under the influence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescence calculations agree quite well with the experimental observations. Within the approaches of our model, we are able to simulate the minority holes mobility from the photocurrent measurements suggesting the use of the experimental technique as a probe of the carrier mobility. |
id |
SBF-2_0b83c69c9542db22a28ec58a83e4d831 |
---|---|
oai_identifier_str |
oai:scielo:S0103-97332006000300029 |
network_acronym_str |
SBF-2 |
network_name_str |
Brazilian Journal of Physics |
repository_id_str |
|
spelling |
Influence of minority carrier transport in the optical properties of double barrier diodesMinority carrier transportDouble barrier diodesGaAs-Al0.35Ga0.65AsThe aim of this work is to study the importance of minority carrier transport in double barrier diodes (DBD). We propose a theoretical model capable to describe the photoluminescence properties observed in GaAs-Al0.35Ga0.65As double barrier diodes with the increase of temperature. In this model, we considered that the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to the well. To study the influence of previous transport mechanisms, we solved the continuity equation under the influence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescence calculations agree quite well with the experimental observations. Within the approaches of our model, we are able to simulate the minority holes mobility from the photocurrent measurements suggesting the use of the experimental technique as a probe of the carrier mobility.Sociedade Brasileira de Física2006-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300029Brazilian Journal of Physics v.36 n.2a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000300029info:eu-repo/semantics/openAccessCamps,I.Vercik,A.Santos,L. F. dosGobato,Y. Galvãoeng2006-07-06T00:00:00Zoai:scielo:S0103-97332006000300029Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-07-06T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Influence of minority carrier transport in the optical properties of double barrier diodes |
title |
Influence of minority carrier transport in the optical properties of double barrier diodes |
spellingShingle |
Influence of minority carrier transport in the optical properties of double barrier diodes Camps,I. Minority carrier transport Double barrier diodes GaAs-Al0.35Ga0.65As |
title_short |
Influence of minority carrier transport in the optical properties of double barrier diodes |
title_full |
Influence of minority carrier transport in the optical properties of double barrier diodes |
title_fullStr |
Influence of minority carrier transport in the optical properties of double barrier diodes |
title_full_unstemmed |
Influence of minority carrier transport in the optical properties of double barrier diodes |
title_sort |
Influence of minority carrier transport in the optical properties of double barrier diodes |
author |
Camps,I. |
author_facet |
Camps,I. Vercik,A. Santos,L. F. dos Gobato,Y. Galvão |
author_role |
author |
author2 |
Vercik,A. Santos,L. F. dos Gobato,Y. Galvão |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Camps,I. Vercik,A. Santos,L. F. dos Gobato,Y. Galvão |
dc.subject.por.fl_str_mv |
Minority carrier transport Double barrier diodes GaAs-Al0.35Ga0.65As |
topic |
Minority carrier transport Double barrier diodes GaAs-Al0.35Ga0.65As |
description |
The aim of this work is to study the importance of minority carrier transport in double barrier diodes (DBD). We propose a theoretical model capable to describe the photoluminescence properties observed in GaAs-Al0.35Ga0.65As double barrier diodes with the increase of temperature. In this model, we considered that the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to the well. To study the influence of previous transport mechanisms, we solved the continuity equation under the influence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescence calculations agree quite well with the experimental observations. Within the approaches of our model, we are able to simulate the minority holes mobility from the photocurrent measurements suggesting the use of the experimental technique as a probe of the carrier mobility. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300029 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300029 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332006000300029 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.36 n.2a 2006 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734862704574464 |