Volmer-Weber growth of CdTe on silicon: a one-dimension Monte Carlo model

• Autor(a) principal: Ferreira,S. O.
• Data de Publicação: 2006
• Outros Autores: Ferreira Jr.,S. C.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300016
• topic: Quantum dots of CdTe; Si(111); Volmer-Weber growth

In the last few years intense efforts have been devoted to the growth and characterization of semiconductor nanostrucutures. In particular, quantum dots of CdTe grown by hot wall epitaxy on Si(111) substrates constitute a very interesting example. CdTe/Si systems follow the Volmer-Weber growth mode with nucleation of 3D CdTe islands on the Si substrate even for less than one monolayer of evaporated material. In the present work, we proposed a simple one-dimension model to reproduce a very peculiar behavior observed in the quantum dot height and size distributions at distinct temperatures. The model, which includes CdTe deposition, diffusion, and revaporization, qualitatively reproduces these distributions. Moreover, the width distributions suggest a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher temperatures.