Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027 |
Resumo: | Strained and partially relaxed In1-xGa xAs yP1-y /InP single quantum wells (SQWs) with different cap layer thicknesses and biaxial strain values grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by double crystal X-ray diffraction, photoluminescence microscopy (PLM) imaging and photoluminescence spectroscopy techniques. Our results indicate a significant improvement of the optical quality of the quaternary wells with increasing values of the cap layer thickness. Tensile and compressive strained In1-xGa xAs yP1-y /InP SQWs grown with the same structure exhibited different relaxation processes, even when the strain magnitude was the same. PLM images of highly compressive quantum wells exhibited a large number of dark lines corresponding to misfit dislocations as a result of the partial relaxation process in the well material. PLM images of similar tensile strained samples revealed only the presence of dark spots with no evidence of misfit dislocations. |
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Brazilian Journal of Physics |
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Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPEStrained and partially relaxed In1-xGa xAs yP1-y /InP single quantum wells (SQWs) with different cap layer thicknesses and biaxial strain values grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by double crystal X-ray diffraction, photoluminescence microscopy (PLM) imaging and photoluminescence spectroscopy techniques. Our results indicate a significant improvement of the optical quality of the quaternary wells with increasing values of the cap layer thickness. Tensile and compressive strained In1-xGa xAs yP1-y /InP SQWs grown with the same structure exhibited different relaxation processes, even when the strain magnitude was the same. PLM images of highly compressive quantum wells exhibited a large number of dark lines corresponding to misfit dislocations as a result of the partial relaxation process in the well material. PLM images of similar tensile strained samples revealed only the presence of dark spots with no evidence of misfit dislocations.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400027info:eu-repo/semantics/openAccessBernussi,A.A.Carvalho Jr.,W.Furtado,M.T.Gobbi,A.L.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400027Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
title |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
spellingShingle |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE Bernussi,A.A. |
title_short |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
title_full |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
title_fullStr |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
title_full_unstemmed |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
title_sort |
Strain and relaxation processes in In1-xGa xAs yP1-y/ InP single quantum wells grown by LP-MOVPE |
author |
Bernussi,A.A. |
author_facet |
Bernussi,A.A. Carvalho Jr.,W. Furtado,M.T. Gobbi,A.L. |
author_role |
author |
author2 |
Carvalho Jr.,W. Furtado,M.T. Gobbi,A.L. |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Bernussi,A.A. Carvalho Jr.,W. Furtado,M.T. Gobbi,A.L. |
description |
Strained and partially relaxed In1-xGa xAs yP1-y /InP single quantum wells (SQWs) with different cap layer thicknesses and biaxial strain values grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by double crystal X-ray diffraction, photoluminescence microscopy (PLM) imaging and photoluminescence spectroscopy techniques. Our results indicate a significant improvement of the optical quality of the quaternary wells with increasing values of the cap layer thickness. Tensile and compressive strained In1-xGa xAs yP1-y /InP SQWs grown with the same structure exhibited different relaxation processes, even when the strain magnitude was the same. PLM images of highly compressive quantum wells exhibited a large number of dark lines corresponding to misfit dislocations as a result of the partial relaxation process in the well material. PLM images of similar tensile strained samples revealed only the presence of dark spots with no evidence of misfit dislocations. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400027 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97331999000400027 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.29 n.4 1999 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734858814357504 |